VN2460N8-G Overview
The VN2460N8-G is a robust high-voltage DMOS power transistor designed for efficient switching and amplification in industrial and automotive applications. Engineered to deliver reliable performance under demanding electrical environments, it features low on-resistance and high avalanche energy capability, ensuring durability and efficiency. Its optimized silicon structure supports rapid switching speeds, making it suitable for power management circuits requiring minimal losses. This component offers a practical solution to engineers seeking enhanced power conversion and control in compact form factors. For detailed specifications and technical support, visit IC Manufacturer.
VN2460N8-G Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) | 9.0 | A |
| Pulsed Drain Current (IDM) | 36 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| On-Resistance (RDS(on)) at VGS=10 V | 0.20 | ?? |
| Power Dissipation (PD) | 150 | W |
| Maximum Avalanche Energy (EAS) | 350 | mJ |
| Junction Temperature (TJ) | -55 to +150 | ??C |
VN2460N8-G Key Features
- High voltage rating: The 600 V drain-source voltage supports demanding industrial applications requiring robust voltage handling.
- Low on-resistance: Minimizes conduction losses, improving overall power efficiency and reducing heat generation in switching circuits.
- High avalanche energy capability: Enhances reliability by tolerating energy surges caused by inductive load switching, critical for automotive and power supply applications.
- Fast switching speed: Enables efficient operation in high-frequency power converters, reducing switching losses and improving system responsiveness.
- Wide operating temperature range: Ensures stable performance from -55 ??C up to 150 ??C, suitable for harsh environments.
- Compact TO-220 package: Facilitates straightforward PCB integration and effective thermal management.
VN2460N8-G Advantages vs Typical Alternatives
Compared to typical DMOS transistors in its class, this device offers a superior balance of high voltage capability and low conduction losses, which enhances efficiency and reliability in power switching applications. Its robust avalanche energy rating provides increased protection against transient conditions, reducing failure risk. The wide temperature tolerance and compact package further distinguish it as an ideal choice for industrial and automotive circuits requiring durable and high-performance components.
🔥 Best-Selling Products
Typical Applications
- Switching regulators and power converters: Designed to support efficient energy conversion by minimizing losses and sustaining high voltage and current loads in power management systems.
- Automotive electronic control units: Suitable for controlling inductive loads and managing power in automotive circuits with demanding electrical requirements.
- Industrial motor drives: Enables precise motor control with high switching speeds and robustness to transient voltage spikes.
- Lighting ballasts and power supplies: Provides stable operation under varying load conditions and protects against voltage surges.
VN2460N8-G Brand Info
This transistor is part of a series designed by a leading semiconductor manufacturer specializing in power management solutions. The product line focuses on providing high voltage, low on-resistance MOSFETs optimized for industrial and automotive applications. The combination of advanced silicon technology and stringent quality control ensures reliable operation in challenging environments. This product exemplifies the brand??s commitment to delivering components that meet rigorous performance and durability standards required by professional engineers and sourcing specialists.
FAQ
What is the maximum voltage rating of this transistor?
The device is rated for a maximum drain-source voltage of 600 volts, making it suitable for applications requiring high voltage tolerance such as industrial power supplies and automotive electronics.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the on-resistance impact its performance?
A low on-resistance of 0.20 ohms at 10 V gate drive reduces conduction losses, which improves efficiency, minimizes heat dissipation, and allows for better power management in switching circuits.
Can this transistor handle high energy transients?
Yes, it features a maximum avalanche energy rating of 350 mJ, meaning it can safely absorb energy spikes caused by inductive load switching without damage, enhancing system reliability.
📩 Contact Us
What temperature range is this component designed to operate within?
It supports a wide junction temperature range from -55 ??C to +150 ??C, enabling dependable operation in environments with extreme temperature variations common in automotive and industrial settings.
What packaging does this transistor use and why is it important?
The device is housed in a TO-220 package, which allows for efficient heat dissipation and easy mounting on printed circuit boards. This packaging supports thermal management and mechanical stability in demanding applications.
