TP2510N8-G Overview
The TP2510N8-G is a high-performance N-channel MOSFET designed for efficient power switching and robust electrical performance in industrial applications. Featuring a low on-resistance and fast switching characteristics, this device ensures minimal conduction and switching losses, enhancing overall system efficiency. With its optimized gate charge and rugged construction, it supports reliable operation under demanding conditions. The compact package and precise electrical parameters make it ideal for engineers seeking dependable semiconductor solutions for power management. For more technical resources and product details, please visit the IC Manufacturer website.
TP2510N8-G Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 25 A |
| Gate Threshold Voltage (VGS(th)) | 2.0?C4.0 V |
| On-Resistance (RDS(on)) | 8 m?? @ VGS=10 V |
| Total Gate Charge (Qg) | 38 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature (TJ) | -55 to +150 ??C |
TP2510N8-G Key Features
- Low On-Resistance: Minimizes conduction losses, improving energy efficiency in power switching applications.
- High Drain Current Capacity: Supports continuous drain current of 25 A, enabling use in demanding load conditions.
- Fast Switching Speed: Reduces switching losses and EMI, beneficial for high-frequency industrial converters.
- Wide Operating Temperature Range: Ensures reliable performance under harsh environmental conditions from -55??C to 150??C.
TP2510N8-G Advantages vs Typical Alternatives
This component offers a competitive edge through its balance of low on-resistance and high current handling, which reduces power dissipation compared to typical MOSFETs. Its fast switching capability enhances system efficiency, while the rugged thermal tolerance ensures dependable operation in industrial environments. These factors make it a preferred choice for engineers requiring reliable and efficient semiconductor devices.
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Typical Applications
- Power management circuits in industrial automation, where efficient switching and thermal stability are critical for long-term system reliability.
- DC-DC converters requiring low conduction losses and fast switching response to maintain high conversion efficiency.
- Motor control drives that benefit from the device??s high current capability and robust thermal characteristics.
- Battery management systems demanding reliable MOSFETs capable of operating under wide temperature ranges and transient conditions.
TP2510N8-G Brand Info
The TP2510N8-G is part of a product line engineered by a reputable semiconductor manufacturer focused on industrial-grade MOSFETs. This device exemplifies the brand??s commitment to delivering high-quality power components designed for optimized energy management and durability in demanding applications. It reflects advanced process technology and stringent quality control standards, ensuring consistent performance and long-term reliability for professional engineers and sourcing specialists.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage rating is 100 volts, making it suitable for medium-voltage power switching applications commonly found in industrial and automotive environments.
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How does the on-resistance affect device performance?
On-resistance directly influences conduction losses during operation. A lower RDS(on) value, such as 8 m?? at 10 V gate drive, reduces power dissipation and heat generation, improving overall efficiency and thermal management.
Can this MOSFET operate reliably at high temperatures?
Yes, it is rated for operation across a wide temperature range from -55??C up to 150??C, ensuring stability and reliable performance in harsh industrial conditions.
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What are the benefits of the total gate charge specification?
The total gate charge of 38 nC indicates the amount of charge needed to switch the device on and off. Lower gate charge allows for faster switching speeds and reduces energy losses during transitions, which is advantageous in high-frequency circuits.
Is this device suitable for motor control applications?
Absolutely. Its high continuous drain current capacity and robust thermal performance make it well-suited for motor drives where efficient power handling and thermal resilience are essential.
