TN2510N8-G Overview
The TN2510N8-G is a high-performance N-channel MOSFET designed to deliver efficient power switching in industrial and automotive applications. Featuring a low on-resistance and robust avalanche energy capability, this device ensures reliable operation under demanding electrical conditions. Its optimized gate charge and switching characteristics enable improved energy efficiency and reduced thermal losses, making it ideal for power management circuits. Manufactured with advanced semiconductor processes, this transistor supports compact system designs and enhances overall device reliability. For more details, visit IC Manufacturer.
TN2510N8-G Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Continuous Drain Current (ID) @ 25??C | 25 | A |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 8.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0?C4.0 | V |
| Total Gate Charge (Qg) | 40 | nC |
| Input Capacitance (Ciss) | 820 | pF |
| Power Dissipation (PD) | 75 | W |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
TN2510N8-G Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency in power conversion systems.
- High Continuous Drain Current: Supports heavy load currents up to 25 A, suitable for demanding industrial applications.
- Optimized Gate Charge: Enables faster switching speeds, reducing switching losses and improving overall system efficiency.
- Wide Operating Temperature Range: Ensures reliable performance in harsh environments from -55??C to 150??C.
- Robust Avalanche Energy Capability: Enhances device reliability under inductive load conditions.
- Compact Package Design: Facilitates efficient PCB layout and thermal management.
TN2510N8-G Advantages vs Typical Alternatives
This transistor provides superior efficiency through its low on-resistance and fast switching characteristics compared to typical MOSFETs. Its ability to handle higher currents with consistent thermal stability offers enhanced reliability in industrial power systems. The optimized gate charge reduces power dissipation during switching, making it a more energy-conscious choice for designers seeking to improve system longevity and performance.
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Typical Applications
- DC-DC converters and power management modules where efficient switching and low losses are critical for system performance and thermal control.
- Automotive electronic control units requiring robust switching components capable of handling high currents and voltages.
- Industrial motor drives and inverters that demand durable transistors with excellent avalanche energy handling.
- Battery management systems for electric vehicles and energy storage, benefiting from precise switching and thermal reliability.
TN2510N8-G Brand Info
The TN2510N8-G is part of a premium MOSFET lineup engineered by a leading semiconductor manufacturer known for high-quality power devices. This product reflects the company??s commitment to delivering efficient, reliable, and robust components tailored for industrial and automotive power electronics. It undergoes rigorous testing to meet stringent industry standards, ensuring dependable operation in critical applications.
FAQ
What is the maximum drain-source voltage rating of this transistor?
The maximum drain-source voltage rating is 100 V, making it suitable for medium to high voltage switching applications commonly found in industrial power circuits.
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How does the low on-resistance affect overall system efficiency?
Low on-resistance reduces the conduction losses when the transistor is switched on, leading to less heat generation and improved power efficiency. This allows designs to operate cooler and more reliably.
Can this device operate in high-temperature environments?
Yes, it supports an operating junction temperature range from -55??C up to 150??C, ensuring reliable performance in both cold and high-temperature conditions typical of automotive and industrial environments.
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What are the key benefits of the optimized gate charge?
The optimized gate charge allows for faster switching speeds with lower energy loss during transitions. This improves the transistor??s efficiency and reduces electromagnetic interference in switching circuits.
Is this MOSFET suitable for automotive applications?
Absolutely. Its robust design, high current capacity, and wide temperature range make it well-suited for various automotive electronic control unit applications requiring durable and efficient power switching devices.
