DN3545N8-G Overview
The DN3545N8-G is a high-performance N-channel MOSFET designed for industrial and power management applications. It delivers efficient switching with low on-resistance and fast switching capabilities, ensuring minimal power loss and thermal dissipation. This device supports robust performance in demanding environments, making it suitable for power converters, motor drivers, and load switches. Its optimized design balances conduction and switching efficiency, contributing to improved overall system reliability. Engineers and sourcing specialists can rely on this MOSFET for enhanced energy efficiency and durability in compact power solutions. For more details, visit IC Manufacturer.
DN3545N8-G Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 45 A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
| Maximum Gate-Source Voltage (VGS) | ??20 V |
| On-Resistance (RDS(on)) | 8.5 m?? @ VGS=10 V |
| Total Gate Charge (Qg) | 15 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature (TJ) | -55 to +150 ??C |
DN3545N8-G Key Features
- Low On-Resistance: Ensures minimal conduction losses, improving energy efficiency and reducing heat generation in power circuits.
- High Continuous Current Capability: Allows reliable operation at currents up to 45 A, supporting demanding power applications.
- Wide Operating Voltage Range: Supports up to 30 V drain-source voltage, suitable for various industrial voltage rails.
- Fast Switching Speed: Low total gate charge enables rapid switching, which enhances efficiency in PWM and DC-DC converter applications.
- Robust Thermal Performance: High power dissipation rating and extended operating temperature range ensure stable operation under harsh conditions.
DN3545N8-G Advantages vs Typical Alternatives
This MOSFET stands out for its combination of low on-resistance and high current capacity, reducing power loss and improving efficiency compared to typical alternatives. Its fast switching performance enables better thermal management and higher frequency operation. The device’s robust voltage ratings and thermal limits provide reliability in industrial environments, making it a preferred choice for engineers seeking durable, high-efficiency power switching components.
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Typical Applications
- Power Conversion Systems: Ideal for use in synchronous rectifiers and DC-DC converters where low conduction loss and fast switching improve overall system efficiency.
- Motor Control: Suitable for driving motors in industrial automation and robotics due to its high current rating and thermal robustness.
- Load Switching: Effective in power distribution circuits for switching loads with minimal voltage drop and power dissipation.
- Battery Management: Applied in battery protection and management circuits, leveraging low gate charge to optimize switching efficiency and extend battery life.
DN3545N8-G Brand Info
The DN3545N8-G is part of a series of power MOSFETs produced by a leading semiconductor manufacturer specializing in advanced discrete components. Designed for reliability and efficiency, this product line targets industrial and automotive sectors requiring robust power management solutions. The device reflects the brand??s commitment to quality, performance, and innovation, offering engineers a trusted option for high-current, low-voltage switching applications.
FAQ
What is the maximum drain-source voltage for this MOSFET?
The device supports a maximum drain-source voltage of 30 V, making it suitable for low-voltage power management and switching applications commonly found in industrial and automotive environments.
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How does the low on-resistance benefit my design?
Low on-resistance significantly reduces conduction losses during operation, which increases energy efficiency and lowers heat generation. This enables smaller heatsinks and more compact designs without compromising reliability.
Can this MOSFET operate at high temperatures?
Yes, it has an operating junction temperature range from -55 ??C to +150 ??C, allowing it to function reliably in harsh thermal environments typical of industrial and automotive applications.
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Is the gate charge suitable for high-frequency switching?
The total gate charge of 15 nC is relatively low, which supports fast switching speeds. This characteristic is beneficial in high-frequency power conversion circuits by minimizing switching losses.
What applications are best suited for this device?
The device is ideal for power conversion, motor control, load switching, and battery management systems, where efficient power handling and reliability under varying load conditions are critical.
