DN3525N8-G Overview
The DN3525N8-G is a high-performance N-channel MOSFET designed for efficient power switching applications. With a low on-resistance and fast switching capabilities, it offers enhanced energy efficiency and thermal performance in compact form factors. This device supports a maximum drain-source voltage of 30 V and continuous drain current suitable for demanding industrial and consumer electronics applications. Its robust design ensures reliable operation in harsh environments, making it ideal for power management, motor control, and DC-DC conversion. For detailed specifications and sourcing, visit IC Manufacturer.
DN3525N8-G Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) @ 25??C | 52 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 – 2.5 | V |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 4.0 | m?? |
| Total Gate Charge (Qg) | 24 | nC |
| Gate-Source Charge (Qgs) | 5.5 | nC |
| Power Dissipation (PD) | 78 | W |
| Operating Temperature Range | -55 to 150 | ??C |
DN3525N8-G Key Features
- Low On-Resistance: Featuring an RDS(on) as low as 4.0 m?? at 10 V gate drive, this device minimizes conduction losses, improving overall system efficiency.
- High Current Handling: Capable of continuous drain current up to 52 A at 25??C, it supports demanding power applications without compromising reliability.
- Fast Switching Performance: The total gate charge of 24 nC enables rapid switching, reducing switching losses and heat generation in high-frequency operations.
- Wide Temperature Range: Operates reliably from -55??C to 150??C, ensuring stability in harsh and industrial environments.
DN3525N8-G Advantages vs Typical Alternatives
Compared to typical MOSFETs in the same voltage class, this device offers a combination of low on-resistance and high current capacity that reduces power loss and thermal stress. Its fast switching characteristics improve efficiency in high-frequency circuits, while the wide operating temperature range enhances reliability across challenging industrial conditions. These features make it a superior choice for engineers seeking robust, energy-efficient power MOSFETs.
🔥 Best-Selling Products

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- DC-DC converters in power management systems, where efficient switching and thermal performance are critical for maintaining stable voltage regulation.
- Motor drive circuits requiring high current capability and rapid switching to support precise speed and torque control.
- Load switching and power distribution modules in industrial automation systems, benefiting from low conduction losses and high reliability.
- Battery management systems for portable and stationary energy storage, optimizing charge and discharge efficiency.
DN3525N8-G Brand Info
This MOSFET is a product of a well-established semiconductor manufacturer specializing in power devices optimized for industrial and consumer electronics. Engineered with advanced silicon technology, the component delivers consistent performance, durability, and integration ease. Its design emphasizes low gate charge, high current conduction, and robust thermal management to support a wide range of applications. The brand is committed to quality and innovation, ensuring customers receive components that meet stringent industry standards and reliability requirements.
FAQ
What is the maximum voltage rating for this MOSFET?
The device supports a maximum drain-source voltage of 30 V, suitable for low to medium voltage power applications where efficient switching is required.
🌟 Featured Products

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the low on-resistance benefit power efficiency?
Lower on-resistance reduces conduction losses during operation, which means less power is wasted as heat. This improves overall system efficiency and reduces cooling requirements.
Can this MOSFET handle high-frequency switching?
Yes, with a total gate charge of 24 nC, the device supports fast switching speeds, making it suitable for high-frequency power conversion and motor control applications.
📩 Contact Us
What is the operating temperature range of this component?
The component operates reliably across a wide temperature range from -55??C to 150??C, allowing it to perform in harsh environments and industrial settings.
Is this device suitable for motor control applications?
Absolutely. Its high continuous drain current rating and fast switching capabilities make it well-suited for motor drive circuits requiring efficient and reliable power handling.






