JAN1N5293-1/TR Overview
The JAN1N5293-1/TR is a high-performance silicon NPN transistor, designed for demanding electronic applications requiring reliable switching and amplification. It features robust electrical characteristics suitable for industrial and commercial use, delivering consistent current gain and low noise. Its construction ensures stable operation across a broad temperature range, making it ideal for environments with varying thermal conditions. Sourced from a reputable IC Manufacturer, this transistor is packaged to support easy integration into circuit designs, offering engineers a dependable component for enhancing device performance.
JAN1N5293-1/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | NPN Silicon Transistor |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 1 A |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 40 to 100 (at IC = 10 mA) |
| Package | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
| Base-Emitter Voltage (VBE) | 1.5 V (max) |
JAN1N5293-1/TR Key Features
- High Voltage Handling: With a collector-emitter voltage rating of 80 V, it supports circuits requiring medium voltage operation, enhancing design flexibility.
- Robust Current Capacity: Capable of handling collector currents up to 1 A, it supports moderate power switching and amplification tasks effectively.
- Wide Temperature Range: Operates reliably between -65??C and +200??C, suitable for harsh environments where thermal stability is critical.
- Metal Can Packaging: The TO-18 package offers excellent thermal conductivity and mechanical durability, facilitating better heat dissipation and long-term reliability.
JAN1N5293-1/TR Advantages vs Typical Alternatives
This transistor offers superior thermal endurance and a broad operating temperature range compared to typical plastic-encapsulated devices. Its metal can package provides improved heat dissipation and mechanical strength, resulting in higher reliability under stressful conditions. The combination of moderate voltage and current ratings with a high transition frequency ensures it performs efficiently in switching and amplification roles where sensitivity and accuracy are paramount.
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Typical Applications
- Industrial control circuits requiring reliable medium-power switching and amplification, benefiting from its robust voltage and current ratings and temperature tolerance.
- Signal amplification in audio and radio frequency circuits, taking advantage of its low noise and high transition frequency.
- Temperature-critical systems such as aerospace or automotive electronics, where operation stability over a wide temperature range is essential.
- General-purpose electronic devices and prototype development, leveraging its standard TO-18 packaging for easy handling and testing.
JAN1N5293-1/TR Brand Info
The JAN1N5293-1/TR is produced under stringent quality standards by a leading semiconductor manufacturer known for delivering reliable and high-performance transistors. This product line is engineered to meet military and industrial specifications, ensuring consistent performance in critical applications. The brand emphasizes durability, precision, and thermal resilience, making it a preferred choice for engineers designing robust electronic systems.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating is 1 ampere, allowing it to handle moderate power switching and amplification applications safely without overheating when operated within specified limits.
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What type of packaging does the transistor use?
The transistor is housed in a TO-18 metal can package, which provides excellent heat dissipation and mechanical protection, enhancing its reliability in demanding environments.
Can this transistor operate in extreme temperature conditions?
Yes, it is designed to operate across a wide temperature range from -65??C up to +200??C, making it suitable for applications exposed to harsh or varying thermal environments.
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What is the typical voltage rating for the collector-emitter junction?
The maximum voltage between the collector and emitter terminals is specified at 80 volts, supporting a variety of medium-voltage circuit designs.
How does the transition frequency affect its application?
The transition frequency of 100 MHz indicates the transistor’s ability to amplify signals with high-frequency components, making it suitable for RF and high-speed switching applications.
