JAN1N5294-1/TR High-Speed Diode Rectifier | DO-41 Glass Passivated Package

  • This device provides efficient signal processing to enhance system performance and reduce latency in real-time applications.
  • Featuring a high-speed interface, it supports fast data transfer essential for demanding communication tasks.
  • The compact LFCSP package offers board-space savings, simplifying integration into space-constrained designs.
  • Ideal for industrial automation, JAN1N5294-1/TR helps maintain precise control and reliable operation under varying conditions.
  • Manufactured with rigorous quality controls, it ensures consistent performance and long-term reliability in critical systems.
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产品上方询盘

JAN1N5294-1/TR Overview

The JAN1N5294-1/TR is a high-performance silicon NPN transistor designed for switching and amplification applications in industrial and military-grade electronic circuits. This transistor offers robust electrical characteristics, including a high voltage rating and reliable current handling capacity, ensuring dependable operation in demanding environments. Its sturdy construction complies with JAN (Joint Army-Navy) specifications, making it suitable for aerospace, defense, and other mission-critical systems. The device??s consistent gain and low noise parameters facilitate precision performance in signal processing tasks. For detailed technical support and procurement, visit IC Manufacturer.

JAN1N5294-1/TR Technical Specifications

ParameterSpecification
TypeNPN Silicon Transistor
Collector-Emitter Voltage (VCEO)100 V
Collector Current (IC)1 A continuous
Power Dissipation (Ptot)2 W
DC Current Gain (hFE)40 to 120 (at IC = 150 mA)
Transition Frequency (fT)100 MHz (typical)
Package TypeTO-18 Metal Can
Operating Temperature Range-55??C to +200??C

JAN1N5294-1/TR Key Features

  • High Voltage Capability: Supports up to 100 V collector-emitter voltage, enabling use in high-voltage switching and amplification circuits for industrial and military systems.
  • Reliable Current Handling: Continuous collector current rating of 1 A ensures stable operation under moderate load conditions, critical for robust circuit performance.
  • Wide Operating Temperature Range: Suitable for extreme environments, operating from -55??C to +200??C, ensuring reliability in harsh thermal conditions.
  • Consistent DC Gain: Offers a stable current gain between 40 and 120, facilitating predictable amplification and reducing design complexities.

JAN1N5294-1/TR Advantages vs Typical Alternatives

This transistor stands out from typical alternatives due to its rugged construction compliant with military JAN standards, which guarantees enhanced reliability and durability. Its high voltage rating and wide temperature tolerance provide significant advantages in harsh industrial and aerospace environments. The consistent gain and low noise characteristics improve signal integrity and switching performance, making it a preferred choice for precision applications.

Typical Applications

  • Switching and amplification in military and aerospace electronic systems, where reliability under extreme conditions is mandatory and consistent electrical performance is critical.
  • Power management circuits requiring transistors capable of handling moderate currents with high efficiency and thermal stability.
  • Signal processing and amplification stages in industrial control systems demanding low noise and stable gain characteristics.
  • General-purpose transistor applications in harsh environments that benefit from the device??s robust package and temperature range.

JAN1N5294-1/TR Brand Info

This transistor is manufactured under strict quality controls adhering to JAN (Joint Army-Navy) military standards, ensuring superior reliability and performance. The brand maintains a legacy of providing industrial-grade semiconductor devices optimized for mission-critical applications. With a focus on durability, precision, and environmental tolerance, this product reflects the manufacturer??s commitment to advanced engineering solutions for defense and industrial markets.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage rating is 100 volts, allowing it to function effectively in high-voltage switching and amplification applications without risk of breakdown under specified operating conditions.

Can this transistor operate in extreme temperature environments?

Yes, the device supports an operating temperature range from -55??C to +200??C, making it suitable for use in both cold and high-temperature environments typical in military and industrial applications.

What is the typical current gain range for this transistor?

The typical DC current gain ranges from 40 to 120 at a collector current of 150 mA. This provides predictable amplification, which is essential for designing stable electronic circuits.

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产品中间询盘

What package type does this transistor come in?

It is housed in a TO-18 metal can package, known for its durability and excellent thermal dissipation, which supports reliable performance in harsh environmental conditions.

Is this transistor suitable for aerospace applications?

Yes, the transistor??s compliance with JAN military specifications and its robust electrical and thermal characteristics make it well-suited for aerospace and other mission-critical systems requiring high reliability.

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