JAN1N5292-1/TR Overview
The JAN1N5292-1/TR is a high-performance silicon switching diode designed to meet demanding industrial and military standards. It offers reliable operation within a wide temperature range and is housed in a hermetically sealed glass package to ensure durability and consistent performance under harsh conditions. This diode is ideal for precise switching and protection applications where low leakage current and fast recovery time are critical. Sourcing specialists and engineers can rely on this component for robust, long-term functionality in complex electronic systems. For more detailed information or procurement options, visit the IC Manufacturer.
JAN1N5292-1/TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 100 | Volts |
| Maximum Average Forward Rectified Current (IF(AV)) | 0.5 | Amperes |
| Maximum Forward Voltage Drop (VF) at IF=0.1A | 1.2 | Volts |
| Reverse Leakage Current (IR) at VR=50V | 50 | nA |
| Reverse Recovery Time (trr) | 4 | ns |
| Operating Temperature Range (TJ) | -65 to +200 | ??C |
| Storage Temperature Range (TSTG) | -65 to +200 | ??C |
| Package Type | Hermetically Sealed Glass DO-7 | – |
JAN1N5292-1/TR Key Features
- Hermetically sealed glass package: Ensures excellent protection against environmental contaminants and moisture, enhancing device longevity and reliability in critical applications.
- Low reverse leakage current: Minimizes power losses and prevents unintended current flow, which is essential for high-precision circuits and energy-efficient designs.
- Fast reverse recovery time: Allows rapid switching, reducing switching losses and improving overall circuit speed and efficiency.
- Wide operating temperature range: Supports reliable function from -65??C to +200??C, making it suitable for harsh industrial and military environments.
JAN1N5292-1/TR Advantages vs Typical Alternatives
This diode stands out due to its robust hermetic sealing, which surpasses typical plastic-encapsulated alternatives by providing superior environmental protection. Its low leakage current and fast recovery time contribute to higher efficiency and precision in switching applications. The extended temperature range further ensures stable operation where other components might fail, making it particularly advantageous for demanding industrial and military uses.
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Typical Applications
- Switching and signal processing circuits in military and aerospace equipment requiring high reliability and long-term stability in extreme temperature conditions.
- Protection diodes in sensitive communication equipment where leakage current and fast recovery are critical to maintaining signal integrity.
- Low-level rectification in precision measurement devices to ensure minimal signal distortion and energy loss.
- General purpose switching and clipping diodes in industrial electronics where environmental resilience is necessary.
JAN1N5292-1/TR Brand Info
This diode is part of a legacy series trusted for stringent quality and performance standards, often utilized in military and aerospace applications. Known for its hermetic sealing and stable electrical characteristics, it represents a reliable solution in the semiconductor industry for high-reliability switching needs. The product is manufactured under strict quality control processes to meet the rigorous demands of defense and industrial sectors.
FAQ
What is the maximum reverse voltage rating of this diode?
The maximum repetitive peak reverse voltage is rated at 100 volts, meaning the diode can safely block voltages up to this threshold without breakdown, making it suitable for low to moderate voltage applications.
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How does the hermetic sealing benefit the diode’s performance?
Hermetic sealing provides a moisture-proof and contaminant-resistant barrier, which protects the diode??s internal semiconductor junction from environmental degradation. This ensures reliability and long-term stability especially in harsh or high-humidity conditions.
What is the significance of the diode??s reverse recovery time?
The reverse recovery time of 4 nanoseconds indicates the diode??s ability to switch quickly from conducting to blocking state. This fast recovery reduces switching losses and electromagnetic interference, which is critical in high-speed circuits.
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Can this diode operate reliably at high temperatures?
Yes, it supports an operating junction temperature range from -65??C to +200??C, making it well-suited for applications exposed to extreme thermal conditions such as aerospace or military electronics.
What packaging style is used for this diode and why is it important?
The device uses a hermetically sealed glass DO-7 package, which is important for providing environmental protection and mechanical stability. This packaging ensures consistent electrical performance over a long service life.
