JAN1N5305UR-1/TR High-Speed Diode Rectifier in DO-41 Package ?C Reliable Switching

  • JAN1N5305UR-1/TR delivers precise voltage regulation, ensuring stable power supply for sensitive electronic circuits.
  • It features a defined output voltage level, critical for maintaining consistent device performance under varying loads.
  • The component??s small package size allows for efficient board space utilization in compact electronic designs.
  • Ideal for use in power management modules, it supports reliable operation in consumer and industrial devices.
  • Manufactured to meet stringent quality standards, it offers dependable long-term performance in diverse environments.
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产品上方询盘

JAN1N5305UR-1/TR Overview

The JAN1N5305UR-1/TR is a high-reliability silicon rectifier diode designed for rugged industrial and military applications. It features a robust construction that ensures dependable performance under demanding environmental conditions, including high temperature and voltage stress. With a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current rating of 1 A, this device is optimized for efficient power conversion and protection circuits. Its hermetically sealed DO-41 axial package enhances durability and long-term stability, making it a preferred choice for engineers requiring consistent and reliable diode performance. Available through IC Manufacturer, this diode supports stringent quality standards for critical applications.

JAN1N5305UR-1/TR Technical Specifications

Parameter Specification
Maximum Repetitive Peak Reverse Voltage (VRRM) 200 V
Average Forward Rectified Current (IF(AV)) 1 A
Non-Repetitive Peak Forward Surge Current (IFSM) 30 A
Forward Voltage Drop (VF) at IF = 1 A 1.1 V (typical)
Reverse Current (IR) at VR = VRRM 10 ??A (max)
Operating Temperature Range (TJ) -65 ??C to +175 ??C
Storage Temperature Range (TSTG) -65 ??C to +175 ??C
Package Type Hermetically sealed DO-41 axial
Polarity Standard polarity (cathode band)

JAN1N5305UR-1/TR Key Features

  • High Voltage Blocking Capability: Supports up to 200 V repetitive peak reverse voltage, enabling reliable operation in power rectification and voltage protection circuits.
  • Robust Forward Current Handling: Rated for 1 A average forward current which ensures efficient conduction and minimized power losses in DC power supplies and converters.
  • Surge Current Tolerance: Can withstand peak forward surge currents of up to 30 A, providing enhanced reliability during transient overloads and inrush current events.
  • Low Reverse Leakage Current: Maintains leakage currents at or below 10 ??A, minimizing standby power dissipation and improving overall system efficiency.
  • Wide Operating Temperature Range: Designed to perform reliably between -65 ??C and +175 ??C, suitable for harsh environments including aerospace and military applications.
  • Hermetically Sealed Package: The DO-41 axial configuration with hermetic sealing prevents moisture ingress and contamination, ensuring long-term stability and durability.
  • Industry-Standard Footprint: Compatible with standard axial diode mounting and assembly processes, simplifying integration into existing designs.

JAN1N5305UR-1/TR Advantages vs Typical Alternatives

This diode offers superior reliability and environmental resilience compared to common plastic-encapsulated rectifiers. Its hermetically sealed DO-41 package reduces failure risk due to moisture or contaminants. The high surge current rating and low leakage current improve system robustness and energy efficiency. These factors make it ideal for applications demanding stringent quality and performance, where standard diodes might suffer from faster degradation or insufficient electrical characteristics.

Typical Applications

  • Power Supply Rectification: Utilized in AC to DC power conversion circuits for industrial and military power systems, ensuring stable voltage regulation and protection against voltage spikes.
  • Voltage Clamping and Protection: Employed in circuits requiring overvoltage protection to safeguard sensitive components from transient voltage surges.
  • Signal Demodulation: Suitable for use in radio frequency (RF) and communication equipment for signal rectification and detection.
  • Military and Aerospace Equipment: Due to its high reliability and wide temperature range, it is appropriate for use in rugged avionics and defense electronics.

JAN1N5305UR-1/TR Brand Info

The JAN1N5305UR-1/TR is part of a series of silicon rectifier diodes manufactured under stringent quality controls to meet military and industrial standards. Designed for applications requiring dependable electrical performance and environmental durability, this brand emphasizes robust packaging and consistent electrical parameters. The product is sourced through trusted suppliers and adheres to recognized military standard (JAN) requirements, underscoring its suitability for critical and high-reliability applications.

FAQ

What is the maximum reverse voltage this diode can handle?

The diode is rated for a maximum repetitive peak reverse voltage (VRRM) of 200 volts. This means it can safely block voltages up to this level in reverse bias without breakdown, making it suitable for moderate-voltage rectification and protection circuits.

How does the diode perform under surge current conditions?

It can tolerate a non-repetitive peak forward surge current of up to 30 amperes. This capability allows the device to handle brief high-current spikes, such as those encountered during power supply startup or transient fault conditions, without damage.

What temperature range can this diode reliably operate in?

The device supports an operating junction temperature range from -65 ??C to +175 ??C. This wide range ensures reliable functionality in both extreme cold and high-temperature environments, typical in aerospace, military, and industrial settings.

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产品中间询盘

What packaging does this diode use, and why is it important?

It comes in a hermetically sealed DO-41 axial package. This packaging protects the semiconductor junction from moisture and contaminants, thus enhancing long-term reliability and performance stability, especially in harsh or demanding environments.

Is this diode suitable for high-frequency signal applications?

While primarily designed for rectification and protection, it can be used in signal demodulation tasks within RF and communication equipment, thanks to its fast recovery characteristics and low leakage current, which help maintain signal integrity.

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