1N5306E3/TR Diode 3A 200V Silicon Rectifier DO-201AD Package

  • Provides reliable voltage regulation to protect circuits from voltage spikes and ensure stable operation.
  • Features a specified breakdown voltage that safeguards components by limiting voltage to safe levels.
  • Housed in a compact package, it offers board-space savings and simplifies integration into dense layouts.
  • Ideal for use in power supply circuits where consistent voltage clamping prevents damage during transient events.
  • Manufactured under controlled processes to maintain consistent performance and long-term reliability in various conditions.
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1N5306E3/TR Overview

The 1N5306E3/TR is a high-voltage silicon rectifier diode designed for robust industrial and power applications. It features a peak repetitive reverse voltage of 200 volts and a maximum average forward rectified current of 1 ampere, making it suitable for moderate power rectification tasks. Packaged in a DO-201AD axial lead form, it offers reliable operation with a maximum forward voltage drop of 1.1 volts at rated current, ensuring efficient energy conversion. This device is optimized for surge current handling and repetitive peak reverse voltage performance, providing dependable protection in power supplies and general rectification circuits. For detailed sourcing and technical support, please visit IC Manufacturer.

1N5306E3/TR Technical Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 200 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Non-Repetitive Peak Forward Surge Current (IFSM) 30 A
Maximum Forward Voltage Drop (VF) at IF=1A 1.1 V
Maximum Reverse Current at Rated Voltage (IR) 10 ??A
Operating and Storage Temperature Range -65 to +150 ??C
Junction Capacitance (CJ) 15 pF
Package Type DO-201AD Axial Lead

1N5306E3/TR Key Features

  • High Voltage Capability: Supports repetitive peak reverse voltages up to 200 V, enabling use in a wide range of power rectification and voltage regulation circuits.
  • Surge Current Handling: Can withstand 30 A non-repetitive surge current, providing resilience against transient overloads in power supply applications.
  • Low Forward Voltage Drop: At 1.1 V forward voltage drop, it delivers efficient energy conversion, minimizing power loss and improving overall circuit efficiency.
  • Wide Operating Temperature Range: Reliable operation from -65??C to +150??C ensures performance stability under harsh environmental conditions.
  • Compact Axial Lead Package: The DO-201AD form factor facilitates easy PCB mounting and integration into existing designs.
  • Low Leakage Current: Maintains a maximum reverse current of 10 ??A, enhancing the device’s reliability in sensitive electronic circuits.
  • Robust Junction Capacitance: With a junction capacitance of 15 pF, it supports switching applications with minimal signal distortion.

1N5306E3/TR Advantages vs Typical Alternatives

This diode offers a balanced combination of voltage rating and surge current capacity, making it advantageous over typical rectifiers with lower voltage thresholds or surge capabilities. Its low forward voltage drop reduces power dissipation, improving system efficiency. The wide temperature range and low leakage current contribute to enhanced reliability in demanding industrial environments. The axial DO-201AD package ensures compatibility with standard mounting processes, simplifying integration compared to less common form factors.

Typical Applications

  • Rectification in power supply units: Suitable for converting alternating current (AC) to direct current (DC) in moderate power circuits requiring reliable voltage handling and surge tolerance.
  • Voltage regulation circuits where consistent forward voltage and low leakage are critical for stable operation.
  • Protection circuits designed to safeguard electronic components from voltage spikes and transient surges.
  • General-purpose rectifying in industrial and commercial electronic equipment where durability and performance consistency are necessary.

1N5306E3/TR Brand Info

The 1N5306E3/TR is a silicon rectifier diode widely recognized for its quality and reliability in industrial semiconductor applications. Manufactured under stringent quality controls, this product meets rigorous performance standards for power rectification. It is typically supplied in a DO-201AD axial lead package, ensuring ease of use in automated and manual assembly processes. Trusted by engineers and sourcing specialists globally, it supports efficient and robust circuit designs requiring dependable diode performance.

FAQ

What is the maximum current rating of this rectifier diode?

This diode supports a maximum average forward rectified current of 1 ampere, which makes it suitable for moderate power rectification tasks in various industrial applications.

Can this device handle surge currents during transient events?

Yes, it can withstand a non-repetitive peak forward surge current of up to 30 amperes, providing robustness against short-term overloads or transient surges in power circuits.

What temperature range is the 1N5306E3/TR rated for?

It operates reliably across a wide temperature range from -65??C to +150??C, allowing use in environments with extreme temperature variations without compromising performance.

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How does the forward voltage drop affect circuit efficiency?

The typical forward voltage drop of 1.1 volts at rated current minimizes power loss during conduction, which improves the overall efficiency of power conversion and reduces heat generation.

Is the packaging suitable for automated assembly processes?

Yes, the device comes in a DO-201AD axial lead package, which is compatible with standard through-hole mounting and automated assembly techniques commonly used in industrial electronics manufacturing.

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