1N5309 Overview
The 1N5309 is a high-power silicon rectifier diode designed to handle significant voltage and current levels in industrial and commercial applications. This device is well-suited for rectification in power supplies, inverters, and other circuits requiring reliable conversion of alternating current (AC) to direct current (DC). With its robust construction, the 1N5309 offers dependable performance under high surge conditions and elevated temperatures, ensuring long-term operational stability. Available through IC Manufacturer, it is an ideal choice for engineers seeking a durable, efficient, and cost-effective rectifier solution for demanding power management tasks.
1N5309 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 600 | Volts |
| Average Forward Current (IF(AV)) | 3 | Amperes |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 150 | Amperes |
| Forward Voltage Drop (VF) at 3A | 1.1 | Volts (typical) |
| Maximum DC Reverse Current (IR) at 25??C | 10 | ??A |
| Maximum Reverse Recovery Time (trr) | 2 | ??s |
| Operating Temperature Range (Tj) | -65 to +150 | ??C |
| Junction Capacitance (Cj) | 25 | pF |
1N5309 Key Features
- High surge current capability: Supports peak forward surge currents up to 150A, ensuring resilience during transient overloads and pulse events.
- Robust voltage rating: With a repetitive peak reverse voltage of 600V, it reliably blocks high-voltage spikes in power rectification circuits.
- Low forward voltage drop: Typical forward voltage of 1.1V reduces power dissipation and improves overall efficiency in power conversion.
- Fast recovery time: Reverse recovery time of 2??s minimizes switching losses in high-frequency applications, enhancing performance in inverter and switching power supply designs.
1N5309 Advantages vs Typical Alternatives
This rectifier diode offers superior surge current handling and voltage blocking capabilities compared to many standard silicon diodes. Its low forward voltage drop contributes to energy-efficient operation, while the fast recovery time supports higher switching frequencies without excessive losses. These advantages combine to improve reliability and reduce thermal stress, making it a strong candidate for power electronics where durability and efficiency are critical factors.
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Typical Applications
- Power supply rectification circuits, converting AC to DC efficiently while withstanding high currents and voltage stress common in industrial power supplies.
- Inverter circuits, where fast recovery and high surge capability help maintain stable power conversion under dynamic conditions.
- Battery charging systems requiring reliable current handling and voltage tolerance to ensure safe and efficient operation.
- General industrial electronics, including motor drives and control circuitry requiring robust diode performance.
1N5309 Brand Info
The 1N5309 is a widely recognized silicon rectifier diode manufactured by established semiconductor suppliers specializing in power devices. This diode is part of a family of high-current, high-voltage rectifiers that meet stringent quality and reliability standards. Its consistent availability and proven performance make it a preferred choice among engineers for industrial-grade power conversion and protection applications.
FAQ
What is the maximum voltage rating of the 1N5309 diode?
The device supports a maximum repetitive peak reverse voltage of 600 volts, allowing it to withstand high voltage spikes typically encountered in power rectifier circuits.
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Can the 1N5309 diode handle surge currents?
Yes, it can handle non-repetitive peak forward surge currents up to 150 amperes, providing resilience against transient overloads and short-term surges in industrial applications.
What is the typical forward voltage drop of this diode?
The forward voltage drop at its rated current of 3 amperes is approximately 1.1 volts, which helps reduce power loss and enhances efficiency in power supply designs.
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Is the 1N5309 suitable for high-frequency switching applications?
With a reverse recovery time of around 2 microseconds, the diode is capable of operating efficiently in switching circuits that demand fast recovery characteristics, such as inverters and switching power supplies.
What temperature range can the 1N5309 operate within?
This diode is designed to function reliably in a wide temperature range from -65??C up to +150??C, making it suitable for harsh industrial environments.
