1N5286 Overview
The 1N5286 is a precision silicon P-channel MOSFET designed for efficient switching and amplification in low-voltage electronic circuits. Featuring a low on-resistance and high current handling capability, this device enhances power efficiency and thermal performance in compact applications. Its robust construction ensures reliable operation in industrial environments, making it suitable for power management, analog switching, and load control. Engineers and sourcing specialists benefit from its proven performance and availability, making it a dependable choice for optimizing circuit designs. For more detailed information and purchasing options, visit IC Manufacturer.
1N5286 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | -30 V (max) |
| Gate-Source Voltage (VGS) | ??20 V (max) |
| Continuous Drain Current (ID) | -0.27 A at 25??C |
| Drain-Source On-Resistance (RDS(on)) | 8 ?? max at VGS = -10 V |
| Power Dissipation (PD) | 0.5 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | TO-92 |
1N5286 Key Features
- Low On-Resistance: Enables efficient conduction with minimal power loss, improving overall circuit efficiency and reducing heat generation.
- High Voltage Tolerance: Supports drain-source voltages up to -30 V, allowing use in moderately high-voltage applications without compromising safety.
- Compact TO-92 Package: Facilitates easy integration into space-constrained designs while ensuring good thermal dissipation.
- Wide Operating Temperature Range: Ensures reliable performance in diverse environmental conditions, suitable for industrial and commercial electronics.
1N5286 Advantages vs Typical Alternatives
This P-channel MOSFET offers a balanced combination of low on-resistance and moderate current capability, distinguishing it from typical alternatives with higher losses or lower voltage ratings. Its compact TO-92 package improves ease of handling and assembly, while the wide temperature range enhances reliability in harsh conditions. These aspects contribute to superior efficiency and durability in power switching and amplification tasks compared to other discrete MOSFET options.
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Typical Applications
- Load switching and power management in low-voltage DC circuits, benefiting from low conduction losses and compact package for tight layouts.
- Analog signal amplification where precise gate control and moderate current handling are required.
- Battery-powered devices requiring efficient power switching with minimal energy drain to extend operational lifetime.
- General-purpose switching in consumer electronics, industrial control systems, and instrumentation.
1N5286 Brand Info
The 1N5286 is a well-established P-channel MOSFET widely available from multiple semiconductor manufacturers. Recognized for its reliability and consistent performance, this device is commonly sourced for industrial and commercial applications where efficient switching and low power loss are critical. Its long heritage and standardized specifications make it a trusted component in engineering and procurement circles, ensuring compatibility and ease of replacement across various electronic designs.
FAQ
What is the maximum drain-source voltage rating of the device?
The maximum drain-source voltage (VDS) rating is -30 volts, which defines the highest voltage the MOSFET can safely block in the off state without breakdown. This rating ensures suitability for low to moderate voltage power switching applications.
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How much current can the device handle continuously?
The continuous drain current rating is -0.27 amperes at 25??C. This parameter indicates the maximum steady-state current the MOSFET can conduct through its drain-source channel without exceeding thermal or electrical limits.
What are the thermal characteristics and operating temperature range?
The device supports an operating temperature range from -55??C to +150??C, making it suitable for use in a variety of environmental conditions. It can dissipate up to 0.5 watts of power, assuming appropriate thermal management practices are in place.
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How does the on-resistance affect circuit performance?
Drain-source on-resistance (RDS(on)) affects power loss and heat generation during conduction. With a maximum of 8 ohms at VGS = -10 V, this MOSFET offers low conduction losses, which improves efficiency and reduces thermal stress on the device and surrounding components.
What package type is used and what are its benefits?
The device is housed in a TO-92 package, which is a compact, through-hole form factor. This package facilitates easy manual or automated assembly, offers reasonable thermal dissipation for its power rating, and supports a wide range of prototyping and production environments.
