IMCQ120R007M2HXTMA1 Power MOSFET, 1200V 70m??, TO-247 Package

IMCQ120R007M2HXTMA1 Overview

The IMCQ120R007M2HXTMA1 is a silicon carbide (SiC) MOSFET optimized for high-performance power electronics. Featuring a TO-247-4 package and a voltage rating of 1200V, this device enables efficient, low-loss switching in demanding industrial and automotive applications. Its low R_DS(on) of 7 m?? at 25??C ensures minimal conduction losses, supporting high-current operation and improved system efficiency. Designed to withstand harsh environments, it meets the needs of engineers seeking robust solutions for next-generation power conversion. For more details, visit the IC Manufacturer.

IMCQ120R007M2HXTMA1 Technical Specifications

IMCQ120R007M2HXTMA1 Key Features

• High voltage rating of 1200V delivers reliable operation in demanding power conversion environments, significantly reducing breakdown risk.
• Extremely low R_DS(on) at 7 m?? minimizes conduction losses, enhancing energy efficiency and supporting high-current loads.
• Silicon carbide MOSFET technology offers superior thermal stability, allowing operation at elevated junction temperatures for increased reliability.
• TO-247-4 package supports straightforward integration into industrial and automotive designs, facilitating robust mechanical and thermal performance.

IMCQ120R007M2HXTMA1 Advantages vs Typical Alternatives

Compared to conventional silicon MOSFETs, the IMCQ120R007M2HXTMA1 achieves lower on-resistance and higher voltage endurance, translating to improved efficiency and reduced heat generation. Its SiC technology provides enhanced thermal stability, making it ideal for high-power and high-temperature scenarios. These characteristics yield longer lifetime, reduced cooling requirements, and greater design flexibility, especially in compact or demanding environments.

Typical Applications

• Industrial motor drives: The device??s high current capacity and low losses make it ideal for variable frequency drives, servo controls, and factory automation equipment where efficiency and reliability are crucial.
• Electric vehicle inverters: Its robust voltage and current handling help boost inverter efficiency and thermal management in automotive traction systems.
• Renewable energy systems: Perfect for use in solar inverters and wind turbine converters, supporting high-voltage DC-DC and DC-AC conversion with minimal losses.
• Uninterruptible power supplies (UPS): Ensures reliable, fast switching and efficient power delivery in backup and critical power infrastructure.

IMCQ120R007M2HXTMA1 Brand Info

The IMCQ120R007M2HXTMA1 is engineered using advanced silicon carbide processes and is packaged in the industry-standard TO-247-4 format, ensuring compatibility with high-power design footprints. This device is trusted by OEMs and system integrators for its balance of performance, efficiency, and ruggedness. Backed by a commitment to quality and innovation, it supports modern power electronics with proven SiC advantages, making it a preferred choice for high-demand industrial and automotive sectors.

FAQ

What are the thermal management requirements for the IMCQ120R007M2HXTMA1 in high-power applications?

The device??s silicon carbide construction allows it to perform efficiently at higher junction temperatures compared to standard silicon MOSFETs. However, for optimal reliability and lifespan, it is recommended to use appropriate heatsinking and consider forced air or liquid cooling in high-current or continuous-duty environments.

Is the IMCQ120R007M2HXTMA1 suitable for fast switching applications?

Yes, silicon carbide MOSFETs offer rapid switching capabilities with reduced switching losses. This makes the device highly suitable for high-frequency applications such as inverters, power supplies, and other systems where switching efficiency is critical.

Can the IMCQ120R007M2HXTMA1 be used in automotive traction inverters?

Absolutely. Its 1200V voltage rating, high current capability, and rugged SiC technology make it a strong candidate for automotive inverters, particularly where high efficiency and thermal stability are required.

What package type does the IMCQ120R007M2HXTMA1 use and why is it important?

This MOSFET is supplied in a TO-247-4 through-hole package, renowned for excellent thermal performance and mechanical robustness. This form factor ensures secure mounting and efficient heat dissipation in power-dense applications.

How does the low on-resistance benefit power electronics designers?

A low R_DS(on) of 7 m?? means reduced conduction losses, which directly translates to higher system efficiency, less heat generation, and the ability to handle higher currents without excessive derating or additional cooling measures.