IMZC120R012M2HXKSA1 Overview
The IMZC120R012M2HXKSA1 is a high-performance power MOSFET engineered for demanding industrial, commercial, and energy applications. Designed to deliver efficient switching with minimal on-resistance, this device offers enhanced thermal performance and robust reliability. Its advanced technology ensures precise control and low conduction losses, making it suitable for high-frequency and high-current environments. With a compact footprint and advanced packaging, this MOSFET enables system designers to achieve superior power density and streamlined layouts. For more details, visit IC Manufacturer.
IMZC120R012M2HXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 120V |
| Drain Current (ID) | Up to 260A |
| RDS(on) (Max) | 1.2 m?? |
| Package | TO-247 4-pin |
| Technology | CoolSiC? MOSFET |
| Operating Temperature Range | -55??C to 150??C |
| Gate Charge (typical) | 132 nC |
| Mounting Type | Through Hole |
IMZC120R012M2HXKSA1 Key Features
- Ultra-low on-state resistance of 1.2 m?? significantly reduces conduction losses, resulting in higher overall system efficiency.
- High current handling capability up to 260A accommodates demanding power conversion and motor drive applications.
- Advanced CoolSiC? technology enables fast switching speeds with reduced switching losses, supporting higher frequency operation and compact system design.
- TO-247 4-pin package enhances thermal management, supporting increased power density and reliability in challenging environments.
IMZC120R012M2HXKSA1 Advantages vs Typical Alternatives
This device offers ultra-low RDS(on) and advanced CoolSiC? MOSFET technology, delivering superior efficiency and reduced heat generation compared to conventional silicon MOSFETs. Its high current capability and robust package design ensure reliable performance in high-stress applications, while supporting higher switching frequencies for more compact and flexible system designs.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial power supplies: The device??s low on-resistance and high current capacity make it ideal for use in industrial-grade switched-mode power supplies, delivering enhanced efficiency and reliable operation in demanding environments.
- Motor drives: Suitable for high-power motor control systems that require fast switching, thermal stability, and consistent performance under heavy loads.
- Renewable energy inverters: Well-suited for solar and wind inverter systems where efficiency and high power density are critical to maximize energy conversion and reduce losses.
- Uninterruptible power supplies (UPS): Offers reliable and efficient switching for backup power systems, ensuring continuous operation during power interruptions.
IMZC120R012M2HXKSA1 Brand Info
Manufactured by a leading provider in advanced semiconductor solutions, the IMZC120R012M2HXKSA1 embodies cutting-edge MOSFET innovation with its CoolSiC? technology. This product is engineered for engineers and system integrators seeking best-in-class power device performance and reliability. The device??s robust design, high current rating, and efficient thermal management make it a trusted choice for high-performance applications across industrial, commercial, and renewable energy sectors.
FAQ
What makes the IMZC120R012M2HXKSA1 suitable for high-efficiency power conversion?
Its ultra-low on-state resistance of 1.2 m?? minimizes conduction losses, significantly enhancing energy efficiency. Combined with advanced CoolSiC? MOSFET technology, this device supports high-frequency operation and reduces both heat and switching losses in demanding power conversion applications.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the TO-247 4-pin package benefit thermal performance?
The TO-247 4-pin package provides enhanced thermal dissipation, allowing for higher power density and improved reliability in systems exposed to elevated temperatures or continuous high current. This package design helps maintain stable operation and extends device longevity.
Is the device suitable for high-frequency switching applications?
Yes, thanks to its CoolSiC? technology and optimized gate charge, this MOSFET supports fast switching speeds. It is ideal for high-frequency power supplies, inverters, and other applications where rapid and efficient switching is essential.
📩 Contact Us
Can this MOSFET be used in renewable energy systems?
Absolutely. Its high efficiency, robust thermal management, and high current capability make it well-suited for use in solar inverters, wind energy converters, and similar renewable energy systems requiring reliable and efficient power switching.
What are the main considerations for integrating this device into a new design?
Engineers should consider the device??s maximum voltage and current ratings, the benefits of its low RDS(on), and the superior thermal performance of the TO-247 4-pin package. Proper layout and heat sinking will further optimize its performance in high-power designs.
