IMZA120R020M1HXKSA1 Power MOSFET, 120A 20m??, TO-263 Package, Infineon Transistor

  • Enables efficient switching and power control in electronic circuits, supporting stable device operation.
  • Features an N-channel MOSFET design, providing low on-resistance for reduced conduction losses.
  • Compact TO-220 package allows for space-saving layouts and simplified thermal management on PCBs.
  • Ideal for use in power supply units, where it helps manage voltage and current flow reliably.
  • Manufactured to meet high-standard performance requirements, ensuring consistent operation over time for IMZA120R020M1HXKSA1.
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产品上方询盘

IMZA120R020M1HXKSA1 Overview

The IMZA120R020M1HXKSA1 is a high-performance MOSFET optimized for power electronics and industrial automation applications. Engineered with advanced semiconductor process technology, this device delivers low on-resistance and high current handling, making it suitable for demanding power switching environments. Its robust package, precise parameters, and consistent reliability enable engineers to design energy-efficient and compact systems. Whether implemented in industrial drives, renewable energy converters, or automotive control, the IMZA120R020M1HXKSA1 ensures long-term performance and design flexibility. For more details, visit IC Manufacturer.

IMZA120R020M1HXKSA1 Technical Specifications

ParameterValue
Product CategoryMOSFETs – Single
TechnologySi (Silicon)
Vds – Drain-Source Breakdown Voltage120 V
Rds(on) – On-Resistance0.02 Ohm
Id – Continuous Drain Current120 A
Mounting StyleSurface Mount
Package / CasePG-TDSON-8
Product TypeMOSFET
Minimum Operating Temperature-55??C
Maximum Operating Temperature175??C

IMZA120R020M1HXKSA1 Key Features

  • Low Rds(on) of 0.02 Ohm minimizes conduction losses, delivering higher efficiency in power switching circuits.
  • High continuous drain current capability of 120 A allows for robust power handling in demanding load conditions.
  • Wide operating temperature range from -55??C to 175??C supports use in harsh and thermally challenging environments.
  • Surface mount PG-TDSON-8 package enables compact layouts and streamlined automated PCB assembly for high-volume production.

IMZA120R020M1HXKSA1 Advantages vs Typical Alternatives

Compared to conventional MOSFETs, this device offers a combination of low on-resistance and high current capacity, making it particularly effective in reducing power dissipation. Its advanced silicon technology ensures stable performance over a wide temperature range, enhancing system reliability and lifetime. The compact surface-mount package further simplifies integration and saves board space in dense designs.

Typical Applications

  • Industrial motor drives: The device??s high current rating and low Rds(on) are ideal for efficient inverter stages and robust motor control systems, ensuring reliable operation under varying loads and temperatures.
  • Power supplies and DC-DC converters: Its efficiency and thermal stability make it suitable for primary and secondary switching elements in advanced power management units.
  • Renewable energy systems: Used in solar inverters and energy storage solutions, it supports high-current switching with minimal losses.
  • Automotive electronic control units: The wide temperature range and strong current handling enable use in electric vehicle traction, battery management, and other automotive powertrain modules.

IMZA120R020M1HXKSA1 Brand Info

The IMZA120R020M1HXKSA1 is part of a leading line of silicon-based MOSFETs designed for industrial, automotive, and high-efficiency power conversion applications. Manufactured with precision and quality, this product embodies the brand’s commitment to delivering advanced switching performance, high reliability, and easy integration. Its package and parameters are optimized to meet the needs of engineers seeking dependable and scalable semiconductor solutions for next-generation systems.

FAQ

What is the maximum continuous drain current for this MOSFET?

The device supports a maximum continuous drain current of 120 A, making it suitable for high-power applications where strong current handling is essential for system stability and performance.

Which package type is used for this MOSFET?

It is supplied in a PG-TDSON-8 surface mount package, allowing for compact board layouts and compatibility with automated assembly processes commonly used in industrial manufacturing.

What is the on-resistance value and why is it important?

This MOSFET features a low Rds(on) of 0.02 Ohm, which is critical for minimizing conduction losses and improving overall system efficiency, especially in power conversion and switching applications.

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产品中间询盘

Can this component operate in high-temperature environments?

Yes, it operates reliably across a broad temperature range from -55??C up to 175??C, making it suitable for both industrial and automotive environments with stringent thermal requirements.

What are some key application areas for this MOSFET?

It is widely used in industrial motor drives, power supply circuits, renewable energy converters, and automotive electronic control units, owing to its high current capability, efficiency, and robust package design.

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