IPW60R017C7XKSA1 Overview
The IPW60R017C7XKSA1 is a high-performance power MOSFET designed for demanding industrial and power conversion applications. With its robust construction and advanced semiconductor technology, this component delivers low on-resistance and reliable switching performance. Its optimized design enables efficient energy management, making it suitable for use in circuits where high voltage and fast switching are critical. The device is engineered to support engineers and sourcing specialists seeking efficiency and reliability in their power electronics designs. For more details, visit IC Manufacturer.
IPW60R017C7XKSA1 Technical Specifications
| Attribute | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (Vds) | 600 V |
| Drain Current (Id) | 41.7 A |
| Rds(on) (Max) | 0.017 ?? |
| Package | TO-247-3 |
| Operating Temperature Range | -55??C to 150??C |
| Gate Charge (Qg) | 212 nC |
| Technology | CoolMOS? C7 |
IPW60R017C7XKSA1 Key Features
- Ultra-low Rds(on) of 0.017 ?? maximizes conduction efficiency and reduces power losses in high-current switching environments.
- 600 V drain-source voltage rating allows for robust operation in high-voltage circuits, ensuring safe and reliable energy delivery.
- High continuous drain current capability (41.7 A) supports large load demands and provides flexibility in design.
- Advanced CoolMOS? C7 technology delivers superior switching performance and lower gate charge, supporting higher frequency operation with reduced switching losses.
- Wide operating temperature range suits industrial environments with varying thermal conditions, enhancing device longevity and reliability.
- Standard TO-247-3 package facilitates easy integration into existing layouts, supporting rapid prototyping and production scalability.
IPW60R017C7XKSA1 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device provides a distinct advantage through its low Rds(on) and high voltage handling, resulting in improved energy efficiency and lower heat generation. The advanced semiconductor process used ensures reliability under demanding conditions, while the reduced gate charge helps minimize switching losses. These related function words highlight its suitability for high-performance industrial and power supply applications.
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Typical Applications
- Switch mode power supplies (SMPS): The device??s high voltage and low on-resistance are ideal for use in SMPS topologies, improving overall conversion efficiency and thermal management in industrial and commercial power supplies.
- Motor drives: Suitable for inverter stages in motor control systems, where efficient high-current switching is required for reliable operation and energy savings.
- Photovoltaic inverters: Utilized in solar power inverters where high voltage endurance and efficient switching directly impact system performance and output quality.
- Uninterruptible power supplies (UPS): Ensures stable, efficient power switching and handling of high load currents critical to backup power solutions.
IPW60R017C7XKSA1 Brand Info
The IPW60R017C7XKSA1 is part of the CoolMOS? C7 series, which is recognized for delivering industry-leading efficiency and performance in high voltage power conversion. This product is tailored to meet stringent industrial standards, offering a combination of low conduction losses and robust thermal stability. The brand??s commitment to advanced semiconductor innovation is reflected in the device??s ability to address the needs of modern power electronic applications, supporting both design flexibility and system reliability.
FAQ
What makes the IPW60R017C7XKSA1 suitable for high-frequency switching applications?
The device features a low gate charge and advanced CoolMOS? C7 technology, which together reduce switching losses and enable efficient operation at higher frequencies. This makes it ideal for applications such as power supplies and inverters where fast switching and minimal energy loss are priorities.
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How does the low Rds(on) value benefit my circuit design?
A low Rds(on) minimizes the voltage drop and power dissipation across the MOSFET during operation. This leads to higher efficiency, reduced heat generation, and potentially smaller heat sink requirements, making designs more compact and cost-effective.
What are the thermal management considerations for this device?
With its TO-247-3 package and wide operating temperature range up to 150??C, the MOSFET is well-suited for use in environments with significant thermal stress. Adequate heatsinking and PCB layout optimization are recommended to ensure maximum performance and reliability.
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Can this MOSFET be used in both commercial and industrial applications?
Yes, the robust voltage and current ratings, combined with proven reliability and efficiency, make the component suitable for a broad spectrum of commercial and industrial applications, including power conversion, motor drives, and renewable energy systems.
What integration advantages does the TO-247-3 package provide?
The standard TO-247-3 package allows for straightforward integration into existing power electronic designs. Its widely accepted footprint supports quick prototyping, easy replacement, and scalable production, streamlining the design-to-manufacture process.
