IMZA65R015M2HXKSA1 Overview
The IMZA65R015M2HXKSA1 is a high-performance N-channel MOSFET optimized for demanding industrial and power management applications. Designed with advanced 650V CoolMOS? C2 technology, this device delivers exceptional switching efficiency and ultra-low RDS(on) for reduced thermal losses. Its robust TO-247 3-pin package supports high current handling, making it ideal for power conversion, motor drives, and switched-mode power supplies. Featuring fast switching behavior and a low gate charge, this MOSFET enables designers to achieve higher system efficiency with reduced component count. For more details, visit IC Manufacturer.
IMZA65R015M2HXKSA1 Technical Specifications
| Parameter | Details |
|---|---|
| Technology | CoolMOS? C2 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 650V |
| On-State Resistance (RDS(on)) | 0.015 ?? |
| Continuous Drain Current (ID) | High current capability (package dependent) |
| Package Type | TO-247, 3-pin |
| Mounting Style | Through Hole |
| Polarity | N-Channel |
IMZA65R015M2HXKSA1 Key Features
- Ultra-low RDS(on) of 0.015 ??, helping to minimize conduction losses and enhance overall system efficiency in high-power designs.
- 650V breakdown voltage, enabling safe and reliable operation in high-voltage industrial and power supply circuits.
- Utilizes advanced CoolMOS? C2 technology, offering superior switching performance and reduced energy dissipation in both hard- and soft-switching topologies.
- TO-247 package with 3-pin configuration for robust mechanical stability and high current handling, supporting demanding thermal and electrical environments.
IMZA65R015M2HXKSA1 Advantages vs Typical Alternatives
Thanks to its advanced CoolMOS? C2 platform, this device provides notably lower on-resistance than standard MOSFETs, reducing switching and conduction losses. The high-voltage 650V rating ensures robust performance in demanding applications, while the TO-247 package supports efficient heat dissipation and high reliability. These factors combine to deliver superior efficiency and longevity compared to typical alternatives.
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Typical Applications
- Switch-mode power supplies (SMPS), where its low RDS(on) and high-voltage capability improve conversion efficiency and thermal management in both industrial and telecom supplies.
- Motor drives, delivering reliable performance and reduced losses in variable frequency drives and servo control systems.
- DC-DC converters, where fast switching and high voltage handling are critical for compact, high-efficiency power stages.
- Uninterruptible power supplies (UPS), supporting robust energy delivery and extended device lifetime in backup power systems.
IMZA65R015M2HXKSA1 Brand Info
This device is part of the CoolMOS? C2 family, renowned for combining high-voltage handling with ultra-low on-resistance in a rugged TO-247 package. The product is engineered to meet the needs of professionals designing power conversion and energy management systems where efficiency, reliability, and compactness are essential. Its proven technology and package versatility make it a popular choice among engineers and sourcing specialists seeking long-term performance and supply assurance.
FAQ
What are the core benefits of using this MOSFET in high-power applications?
The device??s low RDS(on) and high breakdown voltage enable reduced conduction losses and improved efficiency, making it ideal for high-power circuits where thermal management and reliability are essential.
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Is the TO-247 package suitable for demanding thermal environments?
Yes, the TO-247 package offers excellent heat dissipation and mechanical robustness, supporting high current operation in industrial and power conversion settings where temperature control is critical.
What switching topologies does this device support?
It is optimized for both hard- and soft-switching topologies, providing flexibility for a broad range of power supply and conversion designs requiring efficient and reliable switching behavior.
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How does the CoolMOS? C2 technology improve performance?
The advanced technology reduces on-state resistance and switching losses, resulting in higher efficiency, less heat generation, and improved system reliability when compared to standard MOSFET technologies.
Can this product be used in compact or space-constrained designs?
While the TO-247 package is relatively large, its high efficiency and low losses can enable system designers to minimize heatsinking and component count, supporting more compact overall layouts in high-power applications.
