IPT60R028G7XTMA1 Power MOSFET, 600V 41A, TO-263 Package

  • Designed for efficient power switching, supporting high-speed and low-loss operation in electronic circuits.
  • Features an N-channel MOSFET structure, which allows for fast switching and reduced conduction losses.
  • Offered in a compact TO-263 package, enabling space-saving layouts in densely populated PCBs.
  • Commonly used in server power supplies, where it improves energy conversion and system thermal management.
  • Manufactured to support consistent performance and long-term reliability in demanding operating environments.
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IPT60R028G7XTMA1 Overview

The IPT60R028G7XTMA1 is a high-performance N-channel MOSFET optimized for demanding power management applications, offering ultra-low on-resistance and robust voltage handling. Designed to deliver excellent switching characteristics, this device ensures reduced power losses and improved system efficiency. The advanced process technology supports reliable operation in a wide range of industrial and commercial environments, making it a preferred choice for engineers seeking dependable and scalable solutions. For more details, visit the IC Manufacturer.

IPT60R028G7XTMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-to-Source Voltage (VDS)600 V
Continuous Drain Current (ID)56 A
On-Resistance (RDS(on))0.028 ??
Gate Charge (Qg)Not specified
Package TypeTO-220 FullPAK
Operating Temperature Range-55??C to +150??C
Mounting StyleThrough Hole
ConfigurationSingle

IPT60R028G7XTMA1 Key Features

  • Ultra-low RDS(on) minimizes conduction losses, resulting in higher overall efficiency for power conversion systems.
  • High voltage capability up to 600 V supports robust operation in industrial power supplies and motor drives, ensuring reliability under demanding conditions.
  • TO-220 FullPAK package enables easy integration into existing designs while providing enhanced thermal performance and safety.
  • Wide operating temperature range from -55??C to +150??C allows for dependable performance in harsh environments typical of industrial and commercial use.

IPT60R028G7XTMA1 Advantages vs Typical Alternatives

This power MOSFET stands out due to its combination of low on-resistance and high voltage tolerance, enabling reduced heat generation and improved efficiency compared to standard alternatives. The robust package and wide temperature range further support reliable operation, making it ideal for modern power management solutions. Engineers can achieve better system stability and reduced energy losses by integrating this device.

Typical Applications

  • Switch mode power supplies: The device is well-suited for use in high-efficiency SMPS, where low RDS(on) and high voltage handling are critical for minimizing losses and ensuring stable operation.
  • Industrial motor control: Its high current capability and robust voltage rating make it ideal for motor drive circuits operating in demanding industrial environments.
  • Power inverters: Suitable for inverter circuits, especially in renewable energy systems, where efficient switching and reliability are essential.
  • Uninterruptible power supplies (UPS): The MOSFET??s efficiency and thermal performance contribute to longer operational life and improved reliability in backup power systems.

IPT60R028G7XTMA1 Brand Info

The IPT60R028G7XTMA1 is produced by a leading semiconductor manufacturer known for innovating in power electronics. This specific product is engineered to address the requirements of advanced power management and conversion systems, combining reliability, efficiency, and ease of integration. Its reputation in the industry is built on consistent performance and the ability to meet stringent application demands across various sectors.

FAQ

What makes the IPT60R028G7XTMA1 suitable for high-voltage applications?

This device is rated for a drain-to-source voltage of 600 V, allowing it to handle high-voltage circuits with confidence. Its robust construction and high breakdown voltage make it ideal for industrial and commercial power conversion tasks where voltage margins are critical.

How does the low on-resistance benefit system efficiency?

The ultra-low on-resistance of just 0.028 ?? reduces conduction losses during operation. This leads to less heat generation and greater energy efficiency, which is especially valuable in high-power systems such as switch mode power supplies and inverters.

Is the device easy to integrate into existing designs?

With its TO-220 FullPAK package and through-hole mounting style, the component is designed for straightforward integration. The package also enhances thermal management and safety, streamlining the design process for engineers updating or developing power electronics circuits.

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产品中间询盘

Can this MOSFET operate reliably in harsh environments?

Yes, the wide operating temperature range from -55??C to +150??C ensures that it maintains reliable performance even in challenging industrial and commercial conditions. This makes it a solid choice for applications exposed to extreme temperatures.

What are some typical use cases for the IPT60R028G7XTMA1?

Common use cases include switch mode power supplies, industrial motor drivers, power inverters, and uninterruptible power supplies. Any application requiring efficient, high-voltage switching and reliable long-term operation can benefit from this device??s capabilities.

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