IMBG120R026M2HXTMA1 Overview
The IMBG120R026M2HXTMA1 is a high-performance power MOSFET optimized for demanding industrial and automotive applications. Designed to deliver low conduction losses and enhanced switching characteristics, this device supports efficient power management in advanced electronic systems. Its robust construction and precise engineering make it ideal for high-current environments where reliability and thermal stability are essential. With a compact package and advanced technology, this component enables engineers to achieve improved system performance, energy efficiency, and design flexibility. For further information, visit IC Manufacturer.
IMBG120R026M2HXTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Type | Power MOSFET |
| Technology | Trench MOSFET |
| Drain-Source Voltage (VDS) | 120V |
| Continuous Drain Current (ID) | See datasheet |
| RDS(on) (Max) | 26 m?? |
| Gate Charge (Qg) | See datasheet |
| Package Type | TO-Leadless (TOLL) |
| Polarity | N-Channel |
| Operating Temperature Range | See datasheet |
IMBG120R026M2HXTMA1 Key Features
- Low RDS(on): With a maximum on-state resistance of 26 m??, this device minimizes conduction losses, boosting overall system efficiency in power conversion circuits.
- 120V Voltage Rating: The high drain-source voltage capability ensures suitability for industrial and automotive environments with elevated voltage requirements.
- Advanced Trench Technology: The use of trench MOSFET architecture provides fast switching performance and reduced gate charge, supporting greater energy savings and higher frequency operation.
- Compact TOLL Package: The TO-Leadless design enables high power density and efficient heat dissipation, making it suitable for compact boards and thermally challenging designs.
IMBG120R026M2HXTMA1 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device offers a distinct advantage by combining a low RDS(on) value with high voltage tolerance in a compact package. The result is improved power efficiency, reduced thermal stress, and enhanced reliability for mission-critical designs. Its optimized trench structure further ensures lower switching losses, supporting higher system throughput and operational stability.
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Typical Applications
- High-efficiency DC-DC converters: Suitable for use in power supplies where minimized conduction and switching losses are paramount, enabling compact and energy-efficient solutions in server, telecom, and industrial control units.
- Automotive powertrain modules: Ideal for electric vehicle inverter stages and battery management systems, where high voltage robustness and reliability are required.
- Motor drives: Enhances performance in industrial motor control applications, allowing for precise control and efficient operation of motors in factory automation and robotics.
- Load switches and protection circuits: Provides reliable switching and overcurrent protection in both consumer and industrial electronic systems, thanks to its robust voltage and current handling capabilities.
IMBG120R026M2HXTMA1 Brand Info
The IMBG120R026M2HXTMA1 is part of a series of advanced power MOSFETs engineered for high efficiency and robust performance. Manufactured with stringent quality standards, this product delivers consistent electrical characteristics, making it a trusted choice for designers in the automotive, industrial, and power conversion sectors. Its innovative trench technology and compact packaging reflect the brand??s commitment to enabling next-generation power systems with superior reliability and design flexibility.
FAQ
What is the primary advantage of using the IMBG120R026M2HXTMA1 in power conversion applications?
This device??s low RDS(on) and trench MOSFET technology provide lower conduction and switching losses, directly contributing to higher energy efficiency and reduced heat generation in power conversion circuits.
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Is the IMBG120R026M2HXTMA1 suitable for automotive applications?
Yes, its high drain-source voltage rating and robust package make it well-suited for demanding automotive environments, including EV powertrains and battery management systems where reliability and performance are critical.
What package type does the IMBG120R026M2HXTMA1 use, and why is it beneficial?
The device is housed in a TO-Leadless (TOLL) package, which offers low thermal resistance, compact size, and improved power density, making it ideal for modern high-power and space-constrained designs.
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How does the IMBG120R026M2HXTMA1 contribute to system reliability?
Its advanced trench architecture and stringent manufacturing standards ensure stable operation, lower thermal stress, and consistent performance, which are essential for reliable operation in mission-critical systems.
What application sectors benefit most from the IMBG120R026M2HXTMA1?
Industries such as automotive, industrial automation, telecommunications, and renewable energy benefit from this device??s efficiency, compactness, and high-voltage handling, supporting a wide range of advanced electronic designs.
