IMT65R030M1HXUMA1 Overview
The IMT65R030M1HXUMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management environments. With optimized switching characteristics and low on-state resistance, this device delivers efficient power conversion and thermal performance. Its advanced silicon technology enables superior energy savings, making it a reliable choice for engineers seeking robust and scalable solutions. Integrated in a compact package, this MOSFET supports high current handling and consistent operation across varied applications. Experience enhanced reliability and system efficiency with this versatile power transistor from IC Manufacturer.
IMT65R030M1HXUMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current | 61 A |
| On-State Resistance (RDS(on)) | 0.03 ?? |
| Gate Charge (Qg) | 178 nC |
| Package Type | TO-247 3-pin |
| Operating Temperature Range | -55??C to +150??C |
| Mounting Type | Through Hole |
| Polarity | Standard |
IMT65R030M1HXUMA1 Key Features
- 650 V maximum drain-source voltage enables use in high-voltage circuits, supporting robust system-level protection and broader application reach.
- Low 0.03 ?? RDS(on) reduces conduction losses, directly improving energy efficiency and minimizing heat generation in power conversion systems.
- High continuous drain current rating of 61 A allows the device to support heavy loads, making it suitable for industrial-grade power supplies and motor drives.
- TO-247 package offers superior thermal dissipation, providing designers with flexibility for heat management in compact power modules.
- Optimized gate charge (178 nC) supports fast switching, reducing switching losses and enhancing overall system responsiveness.
- Wide operating temperature range ensures reliable performance in harsh industrial and automotive environments.
IMT65R030M1HXUMA1 Advantages vs Typical Alternatives
This power MOSFET stands out with its combination of low on-resistance and high voltage capability, delivering superior efficiency and reliability compared to standard alternatives. The optimized gate charge and robust current handling ensure reduced switching losses and enhanced thermal performance, resulting in greater operational stability and lower system-level power consumption. Its versatile package and broad temperature support make it ideal for demanding industrial and commercial power applications.
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Typical Applications
- Switch-mode power supplies (SMPS): The device??s low RDS(on) and high voltage rating make it ideal for efficient energy conversion and compact SMPS designs in industrial and consumer electronics.
- Motor control and drives: Its high current handling and fast switching characteristics support reliable operation in variable frequency drives and industrial automation systems.
- Uninterruptible Power Supplies (UPS): Ensures stable, efficient power switching to maintain uninterrupted supply during load transitions or outages.
- Solar inverters: Provides high efficiency and reliability in photovoltaic power conversion systems, optimizing energy output and system longevity.
IMT65R030M1HXUMA1 Brand Info
The IMT65R030M1HXUMA1 is engineered by a leader in semiconductor manufacturing, recognized for innovation and quality in power electronics. This specific product leverages advanced MOSFET technology to deliver a balance of high voltage endurance, low conduction losses, and robust thermal management. As part of a comprehensive portfolio, it enables engineers and sourcing specialists to design energy-efficient, reliable systems for a wide range of power management and industrial applications. Its proven performance and consistent quality ensure dependable results in both new designs and retrofit projects.
FAQ
What is the recommended application environment for this MOSFET?
This device is well-suited for use in high-voltage, high-current environments such as industrial power supplies, motor drives, and renewable energy systems. Its wide operating temperature range and robust package make it reliable in both harsh and controlled conditions.
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How does the low on-state resistance benefit my design?
The low RDS(on) value significantly reduces conduction losses, leading to less heat generation and improved overall energy efficiency. This allows for more compact designs and can reduce the need for extensive cooling solutions.
What are the key thermal management features of this product?
The TO-247 package provides excellent thermal dissipation, which is crucial for high-power applications. Combined with a high current rating, this ensures stable operation under continuous load and helps extend the lifespan of the device.
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Is the IMT65R030M1HXUMA1 suitable for fast switching applications?
Yes, the optimized gate charge enables fast switching speeds, which minimizes switching losses and improves efficiency in applications such as switch-mode power supplies and inverter circuits.
Can this device be used in automotive or renewable energy systems?
With its high voltage rating, robust current capability, and wide temperature range, this MOSFET is an excellent choice for automotive and renewable energy systems, including electric vehicle chargers and solar inverters, where reliability and efficiency are paramount.






