IPT60R022S7XTMA1 Power MOSFET, 600V, TO-263 Package, N-Channel Transistor

  • Efficiently manages power switching tasks, helping users reduce energy loss in electronic designs.
  • Low on-resistance minimizes conduction losses, which supports cooler operation and increased system efficiency.
  • Features a compact package that saves valuable board space in densely populated circuit layouts.
  • Well-suited for use in power supplies, motor drives, or industrial automation where robust switching is required.
  • Manufactured to meet strict quality standards, offering reliable performance in demanding environments.
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IPT60R022S7XTMA1 Overview

The IPT60R022S7XTMA1 is an advanced N-channel MOSFET designed for demanding industrial and power management applications. Manufactured using a refined process technology, this device offers low on-resistance and high breakdown voltage, making it well-suited for efficiency-critical systems. Its robust build ensures reliable performance in harsh environments, while compact packaging supports dense board layouts. With a focus on switching speed and thermal management, this component is ideal for engineers seeking stable operation and high power density. For more details, visit IC Manufacturer.

IPT60R022S7XTMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)600 V
Drain Current (ID)36 A
On-Resistance (RDS(on))22 m??
Gate Charge (Qg)72 nC
Power Dissipation208 W
Package / CaseTO-220 FullPAK
Mounting TypeThrough Hole
Operating Temperature Range-55??C to +150??C

IPT60R022S7XTMA1 Key Features

  • Low on-resistance of just 22 m??, resulting in minimal conduction losses and improved efficiency in high-current applications.
  • High voltage withstand capability up to 600 V, allowing safe operation in circuits handling elevated voltages typical of industrial power supplies.
  • High drain current rating up to 36 A, supporting robust power delivery and flexibility in demanding load conditions.
  • Optimized gate charge (72 nC) enables fast switching speeds, reducing switching losses and supporting rapid control loops.
  • TO-220 FullPAK package offers easy heat dissipation and electrical insulation, simplifying thermal management and PCB layout.
  • Wide operating temperature range from -55??C to +150??C ensures consistent performance in harsh or fluctuating environments.

IPT60R022S7XTMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device provides superior energy efficiency due to its low on-resistance and optimized gate charge. The high voltage and current ratings offer excellent flexibility for industrial and switch-mode power supply designers. Its robust thermal characteristics and user-friendly packaging ensure reliable operation and straightforward integration, outperforming many typical alternatives in demanding environments.

Typical Applications

  • Switch-mode power supplies (SMPS): Essential for energy-efficient conversion in industrial, telecom, and server platforms, benefiting from the device??s low switching losses and high breakdown voltage.
  • Motor drives: Suitable for controlling motors in automation or robotics, where high current capability and ruggedness are crucial for reliability and performance.
  • Uninterruptible power supplies (UPS): Used in battery management and inverter stages, leveraging high voltage tolerance and efficiency to ensure stable backup power delivery.
  • Solar inverters: Ideal for photovoltaic energy conversion circuits, delivering efficient and reliable power handling in renewable energy systems.

IPT60R022S7XTMA1 Brand Info

This product is part of a high-performance line of power semiconductors engineered for demanding industrial and power applications. The component is recognized for its combination of low losses, robust voltage handling, and reliable thermal management. Its design reflects the manufacturer??s commitment to advanced process technology and quality assurance, ensuring dependable operation for engineers and system integrators across a range of challenging environments.

FAQ

What makes the IPT60R022S7XTMA1 suitable for high-voltage applications?

Its 600 V drain-source voltage rating allows safe operation in circuits exposed to high line voltages, ensuring insulation and breakdown reliability. This makes the device particularly well-suited for industrial systems and power conversion solutions where voltage stress is common.

How does the low on-resistance of this MOSFET benefit power system designs?

The low on-resistance of 22 m?? reduces conduction losses, improving overall energy efficiency and minimizing heat development. This is especially advantageous in high-current power supplies, motor drives, and systems where thermal management is a design priority.

Why is the TO-220 FullPAK package important for industrial designs?

The TO-220 FullPAK package provides integrated electrical isolation, efficient heat dissipation, and compatibility with standard heatsinks. This simplifies mounting and enhances reliability, making it easier to design robust systems with effective thermal control.

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Can this device be used in environments with wide temperature variations?

Yes, its wide operating temperature range from -55??C to +150??C ensures stable performance in both extreme cold and high-heat industrial settings, supporting consistent operation even under fluctuating ambient conditions.

What are the key considerations when integrating this MOSFET into a new design?

Designers should account for its voltage and current ratings, on-resistance, and gate charge to optimize switching performance and thermal management. Proper heatsinking and layout practices will maximize the reliability and efficiency of the final application.

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