IPB60R040CFD7ATMA1 Overview
The IPB60R040CFD7ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and commercial power management applications. With a robust 600V drain-source voltage rating and optimized for fast switching, this device offers low on-resistance and efficient thermal performance, making it suitable for high-efficiency power supplies and motor drives. Its advanced trench technology ensures reliability, reduced switching losses, and enhanced energy savings. For engineers seeking a reliable, efficient, and cost-effective power semiconductor solution, this MOSFET delivers outstanding value. For more information, visit the IC Manufacturer.
IPB60R040CFD7ATMA1 Technical Specifications
| Attribute | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 41 A |
| On-Resistance (RDS(on)) | 0.040 ?? |
| Gate Charge (Qg) | 148 nC |
| Mounting Type | Through Hole |
| Package / Case | TO-220 |
| Operating Temperature Range | -55??C to 150??C |
IPB60R040CFD7ATMA1 Key Features
- High voltage tolerance: With a 600V drain-source voltage, it supports robust power switching in high-voltage circuits, reducing the risk of breakdown.
- Low on-resistance: The 0.040 ?? RDS(on) minimizes conduction losses, increasing overall system efficiency and supporting higher output currents.
- Fast switching capability: Optimized gate charge (148 nC) enables higher-frequency operation, improving response time in dynamic load conditions.
- Thermal reliability: The device??s TO-220 package and wide operating temperature range ensure stable performance even in demanding industrial environments.
IPB60R040CFD7ATMA1 Advantages vs Typical Alternatives
This device stands out in the power MOSFET market due to its combination of high voltage rating, low RDS(on), and efficient gate charge. These attributes deliver improved switching efficiency, reduced heat generation, and greater reliability compared to standard alternatives, making it ideal for engineers focused on robust and energy-efficient designs.
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Typical Applications
- Switch-mode power supplies (SMPS): The low on-resistance and high voltage capability ensure efficient conversion and reduced thermal stress in AC/DC and DC/DC converters.
- Motor drive circuits: Suitable for industrial and commercial motor controllers where reliable switching and thermal management are critical.
- Uninterruptible power supplies (UPS): Supports fast, efficient power switching, contributing to system reliability and longevity.
- Renewable energy inverters: Ideal for photovoltaic and wind power systems requiring robust high-voltage switching devices.
IPB60R040CFD7ATMA1 Brand Info
The IPB60R040CFD7ATMA1 is part of a specialized line of power MOSFETs engineered to meet the stringent requirements of industrial and commercial power management systems. Designed with advanced trench technology, this product is recognized for its balance of high-voltage performance, low conduction loss, and reliable switching characteristics. Its TO-220 package supports easy integration into a variety of power electronics applications, making it a trusted choice for engineers seeking quality and performance in their designs.
FAQ
What is the main advantage of using this MOSFET in high-voltage designs?
The primary advantage is its 600V drain-source voltage rating, which provides ample headroom for high-voltage switching applications. This helps prevent breakdown and ensures safe, reliable operation in demanding environments.
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How does the low on-resistance value benefit my circuit performance?
The 0.040 ?? on-resistance results in lower conduction losses during operation. This improves efficiency, reduces heat generation, and allows for higher output currents without significant thermal management requirements.
Is the device suitable for fast switching applications?
Yes, its optimized gate charge enables efficient high-frequency switching, which is essential in applications like switch-mode power supplies and inverters. This can improve system response and overall energy efficiency.
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What mounting options are available for this MOSFET?
The device is provided in a TO-220 package, designed for through-hole mounting. This allows for robust attachment and efficient heat dissipation, making it suitable for both prototyping and production-level applications.
Can the device operate in harsh environmental conditions?
With an operating temperature range from -55??C to 150??C and a durable package design, this MOSFET is capable of performing reliably in a wide range of industrial and commercial settings, including those with challenging thermal requirements.
