IPF067N20NM6ATMA1 Overview
The IPF067N20NM6ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power management applications. Featuring advanced trench technology, this device offers low on-resistance and fast switching characteristics, making it ideal for designs requiring efficient power conversion, robust load control, and minimized energy losses. Its compact DPAK (TO-252) surface-mount package supports automated assembly and reliable thermal management. System designers and sourcing professionals will value its proven reliability and optimized footprint for power electronics projects. For full sourcing and manufacturer data, visit IC Manufacturer.
IPF067N20NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 67 A |
| On-Resistance (RDS(on)) | 39 m?? |
| Gate Charge (Qg) | Typically low (refer to datasheet for precise value) |
| Package | DPAK (TO-252), Surface Mount |
| Polarity | N-Channel |
| Mounting Type | Surface Mount Technology (SMT) |
| Technology | Trench MOSFET |
| RoHS Compliance | Yes |
IPF067N20NM6ATMA1 Key Features
- Low RDS(on) minimizes conduction losses, boosting energy efficiency in power switching circuits.
- High drain current rating (67 A) enables robust performance in high-load environments such as motor drives and power supplies.
- 200 V drain-to-source voltage allows for safe operation in medium- to high-voltage applications, enhancing system reliability.
- Surface-mount DPAK package supports automated assembly and effective heat dissipation, streamlining manufacturing and improving thermal management.
IPF067N20NM6ATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device delivers superior efficiency and reliability because of its low on-resistance and high drain current capability. Its advanced trench technology and DPAK packaging offer optimized power density and simplified integration, making it a preferred choice for designers focused on minimizing losses, improving thermal performance, and achieving compact layouts in industrial circuits.
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Typical Applications
- Switch-mode power supplies (SMPS): Suitable for high-speed switching and efficient power conversion, this MOSFET is often utilized in SMPS topologies for both industrial and commercial electronics.
- Motor control circuits: Supports robust load switching and precise current management in motor driver modules across automation and robotics systems.
- DC-DC converters: Enables efficient voltage regulation and power delivery in energy management systems, including telecom and server power architectures.
- Battery protection and management: Assists in safeguarding battery packs and enabling safe, efficient energy transfer in renewable energy storage or automotive applications.
IPF067N20NM6ATMA1 Brand Info
The IPF067N20NM6ATMA1 is part of a trusted portfolio of advanced MOSFET solutions, designed to meet the rigorous demands of industrial and power control applications. Manufactured using precision trench technology, this product stands out for its low losses, robust current handling, and reliable surface-mount packaging. It is engineered to deliver consistent, high-quality performance in environments where efficiency, footprint, and thermal management are critical to system success.
FAQ
What packaging format is available for the IPF067N20NM6ATMA1 and how does it benefit assembly?
This MOSFET is supplied in a DPAK (TO-252) surface-mount package, which is widely supported by automated assembly lines. This format promotes efficient thermal management and ensures a compact footprint, ideal for high-density PCB designs.
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Is the IPF067N20NM6ATMA1 compliant with environmental standards?
Yes, the device is RoHS compliant, meaning it is free from hazardous substances commonly restricted in electronics manufacturing. This compliance helps users meet international environmental and safety regulations in their end products.
What are the main electrical performance highlights of this MOSFET?
It offers a 200 V drain-to-source voltage and a continuous drain current of 67 A. The low on-resistance (39 m??) ensures minimal energy loss during operation, supporting both efficiency and power density in demanding circuits.
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For which types of applications is this MOSFET particularly suitable?
It is well-suited for power switching roles in SMPS, motor drivers, DC-DC converters, and battery management systems. Its high current rating and voltage tolerance make it reliable in both industrial and commercial power designs.
What technology underpins the low RDS(on) in this device?
The MOSFET uses advanced trench technology, which reduces channel resistance and enhances switching speed. This results in lower conduction losses and improved overall energy efficiency for power electronics applications.
