IPB110N20N3LFATMA1 Overview
The IPB110N20N3LFATMA1 is a power MOSFET designed for robust switching and power management in demanding industrial and automotive environments. With a high voltage rating and optimized low on-resistance, this N-channel MOSFET delivers reliable performance, thermal efficiency, and fast switching speeds. Its advanced silicon technology supports efficient power conversion, making it a preferred choice for engineers seeking durability and consistent operation in power supplies, motor drives, and high-current switching applications. Learn more at IC Manufacturer.
IPB110N20N3LFATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Id) | 110 A |
| On-State Resistance (Rds(on)) | 3.3 m?? |
| Package / Case | TO-263 (D2PAK) |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) | Not specified |
| Operating Temperature Range | -55??C to +175??C |
IPB110N20N3LFATMA1 Key Features
- High voltage capability of 200 V allows safe operation in industrial and automotive high-side switching circuits.
- Low on-resistance of 3.3 m?? reduces conduction losses, enhancing overall power efficiency for critical applications.
- High continuous drain current rating (110 A) supports demanding loads and ensures reliable operation in high-power systems.
- Surface-mount D2PAK package simplifies PCB assembly while providing excellent thermal dissipation for better reliability.
IPB110N20N3LFATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET offers a combination of low on-resistance and high current capability, enabling lower heat generation and improved energy efficiency compared to standard alternatives. Its robust voltage rating and reliable surface-mount package deliver consistent performance even in harsh environments, minimizing failure risks and reducing maintenance needs for long-term applications.
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Typical Applications
- Switching power supplies, where high voltage and current handling are essential for minimizing losses and ensuring efficient energy conversion in industrial automation and data center power systems.
- Motor control circuits in automotive and industrial settings, using the device??s high current rating for reliable operation under dynamic loads.
- Battery management systems and power distribution units that require solid-state switching with minimal voltage drop and high reliability.
- DC-DC converters and inverters, where fast switching speeds and thermal efficiency are critical for compact and efficient designs.
IPB110N20N3LFATMA1 Brand Info
The IPB110N20N3LFATMA1 is engineered to deliver high-performance switching and power management for professional-grade applications. Manufactured to exacting standards, this MOSFET addresses the needs of engineers seeking a reliable, high-current, and low-loss solution. Its design ensures ease of integration into modern electronic systems, backed by the trusted quality assurance of a leading semiconductor supplier.
FAQ
What makes the IPB110N20N3LFATMA1 suitable for high-power applications?
This MOSFET features a high current rating of 110 A along with a low on-resistance of 3.3 m??, which helps minimize energy losses during switching and conduction. Its 200 V voltage rating supports robust operation in high-voltage power systems, making it ideal for demanding environments.
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How does the D2PAK (TO-263) package benefit thermal management?
The D2PAK surface-mount package provides a large thermal pad for efficient heat dissipation, allowing the device to maintain stable operation even under high currents and elevated temperatures, which is critical in industrial and automotive electronics.
Is the IPB110N20N3LFATMA1 compatible with automated PCB assembly?
Yes, its surface-mount D2PAK package is fully compatible with standard automated pick-and-place and reflow soldering processes, streamlining manufacturing and ensuring secure, reliable mounting on PCBs.
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Can this device operate reliably at elevated temperatures?
With an operating temperature range from -55??C to +175??C, this MOSFET is designed to maintain reliable performance in both extreme cold and hot environments, supporting applications where thermal stresses are common.
What types of systems benefit most from the IPB110N20N3LFATMA1?
Systems such as industrial inverters, motor drives, automotive power modules, and advanced battery management units benefit from its high current capability, low conduction losses, and robust voltage handling, ensuring efficiency and durability in real-world operation.
