IPP069N20NM6AKSA1 Overview
The IPP069N20NM6AKSA1 is a high-performance N-channel MOSFET specifically designed for demanding industrial and automotive power management applications. With its low on-resistance and robust current handling capability, this device delivers efficient switching and reliable operation under challenging loads. Its advanced trench technology ensures optimal energy efficiency, reducing power losses in high-frequency and high-current circuits. This makes it an excellent choice for engineers prioritizing minimal conduction losses and compact designs. For further datasheets and sourcing support, visit IC Manufacturer.
IPP069N20NM6AKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (Max) @ VGS = 10V | 6.9 m?? |
| Gate Charge (Qg) | 170 nC |
| Package / Case | TO-220 |
| Technology | Trench MOSFET |
| Operating Temperature Range | -55??C to +175??C |
IPP069N20NM6AKSA1 Key Features
- Low RDS(on) of 6.9 m?? at 10V gate drive enables highly efficient switching, lowering conduction losses in power circuits.
- High drain current capability of up to 120 A supports demanding loads in industrial and automotive environments, ensuring robust system design.
- Wide voltage tolerance up to 200 V allows usage in high-voltage applications without compromising safety or device reliability.
- Trench MOSFET technology results in reduced gate charge, improving switching speed and minimizing energy loss during transitions.
IPP069N20NM6AKSA1 Advantages vs Typical Alternatives
This device offers significantly lower on-state resistance and higher current handling than many standard MOSFETs, leading to improved efficiency and less heat generation. Its combination of trench technology and low gate charge also supports faster switching, making it ideal for applications that demand both power density and precise control. These advantages help simplify thermal management and reduce board space requirements.
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Typical Applications
- Switching power supplies: The device??s low RDS(on) and high current capability make it suitable for primary-side and synchronous rectification in high-efficiency SMPS designs, improving overall power conversion efficiency.
- Motor drives: Used for controlling DC motors in industrial automation or automotive systems, where reliable high-current switching is essential.
- Battery management systems: Its robust voltage and current ratings support safe and efficient battery protection and charging circuits in energy storage solutions.
- Solar inverters: Ideal for use in photovoltaic inverter topologies, providing reliable and efficient switching in renewable energy installations.
IPP069N20NM6AKSA1 Brand Info
The IPP069N20NM6AKSA1 is produced by a leading provider of advanced semiconductor solutions. This MOSFET is part of a portfolio recognized for its innovation in power electronics. Designed for engineers seeking reliability and performance, it delivers state-of-the-art trench MOSFET technology in a widely used TO-220 package, enabling seamless integration into both new designs and legacy systems.
FAQ
What makes the IPP069N20NM6AKSA1 suitable for high current applications?
Its maximum continuous drain current rating of 120 A, combined with low RDS(on), enables efficient handling of substantial load currents. This minimizes voltage drop and power loss, which is critical in high current environments such as motor drives and power supplies.
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Can this MOSFET be used in automotive circuits?
Yes, its robust voltage and current ratings, along with an extended operating temperature range, make it suitable for automotive power management, battery control, and electric drive applications that require reliability under harsh conditions.
What are the thermal management benefits of using this component?
The low on-state resistance and efficient switching characteristics help reduce heat generation, simplifying thermal management and enabling denser layouts in power electronic assemblies. This can lead to cost savings in cooling solutions.
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Is the TO-220 package suitable for direct mounting and heat sinking?
Yes, the TO-220 package is widely used for its ease of mounting and excellent thermal performance. It supports straightforward integration with heat sinks, further aiding in effective power dissipation.
How does trench MOSFET technology improve overall system efficiency?
Trench technology allows for lower gate charge and on-resistance, which means faster switching and reduced conduction losses. This translates to higher efficiency in switching power supplies and inverter systems, optimizing both performance and energy consumption.
