IPB048N15N5LFATMA1 N-Channel MOSFET, 150V, TO-220 Package, Power Transistor

  • Designed as a power MOSFET, it enables efficient switching and power management in electronic circuits.
  • Features an N-channel configuration, offering low on-resistance for reduced energy loss and heat generation.
  • The compact package type allows for board-space savings and supports high-density PCB layouts.
  • Ideal for motor control or power supply circuits, helping to improve overall system efficiency and performance.
  • Manufactured with quality materials to ensure consistent operation and long-term device reliability.
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IPB048N15N5LFATMA1 Overview

The IPB048N15N5LFATMA1 is a high-performance N-channel MOSFET optimized for demanding power management applications. Featuring a voltage rating of 150V and a low RDS(on), it delivers efficient switching and minimal conduction losses, making it ideal for modern industrial and commercial systems. With its robust TO-263 package, this device offers both thermal efficiency and mechanical reliability. The IPB048N15N5LFATMA1 is well-suited for use in power supplies, motor control, and energy conversion circuits where high efficiency and reliability are paramount. For more details, visit IC Manufacturer.

IPB048N15N5LFATMA1 Technical Specifications

Parameter Value
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 150V
Drain Current (ID) 48A
RDS(on) (max) 15 m??
Gate Charge (Qg) Low
Package TO-263 (D2PAK)
Polarity N-Channel
Mounting Type Surface Mount
Technology Power MOSFET

IPB048N15N5LFATMA1 Key Features

  • Low on-resistance minimizes conduction losses, improving overall system efficiency in high-current circuits.
  • High voltage rating of 150V allows use in demanding industrial and automotive power management environments.
  • Surface-mount TO-263 package enhances thermal management, ensuring reliable performance under sustained load.
  • Optimized gate charge supports fast switching, reducing switching losses and enabling high-frequency applications.

IPB048N15N5LFATMA1 Advantages vs Typical Alternatives

This device offers a compelling combination of low RDS(on) and high drain current capacity, delivering lower conduction losses and higher efficiency compared to many standard MOSFETs. The robust TO-263 package and optimized gate charge further enhance thermal performance and switching speed, making it a preferred choice for applications demanding high reliability and power density. These features are crucial for modern power electronics and drive systems.

Typical Applications

  • Switching power supplies: The low on-resistance and high voltage rating make it ideal for synchronous rectification and main switching stages, supporting efficient power conversion and compact design.
  • Motor drivers: Suitable for industrial and automotive motor control circuits, where reliable and efficient switching of inductive loads is required.
  • DC-DC converters: Ensures high efficiency and fast transient response in both isolated and non-isolated converter topologies.
  • Battery management systems: Supports high current handling and precise switching, aiding in safe, reliable battery protection and charging circuits.

IPB048N15N5LFATMA1 Brand Info

The IPB048N15N5LFATMA1 is part of a renowned portfolio of power MOSFETs engineered for energy-efficient and robust power management solutions. This part is manufactured to meet stringent quality standards, ensuring consistent performance in challenging operating environments. Its design reflects a focus on low conduction and switching losses, offering system designers a reliable building block for advanced industrial and commercial electronics. The TO-263 surface-mount package further enhances its appeal by supporting automated assembly and improved thermal management, which is critical for high-power applications.

FAQ

What are the primary benefits of using the IPB048N15N5LFATMA1 in power switching applications?

This MOSFET provides low conduction and switching losses due to its low RDS(on) and optimized gate charge. These features enable higher efficiency and reduced heat generation, making it highly suitable for power switching applications in modern industrial systems.

Is the IPB048N15N5LFATMA1 suitable for high-frequency operation?

Yes, its fast switching capability and low gate charge allow it to perform efficiently at high frequencies. This makes the device well-suited for applications such as DC-DC converters and high-frequency power supplies.

What type of package does the IPB048N15N5LFATMA1 use, and what are its benefits?

The device comes in a TO-263 (D2PAK) surface-mount package, which offers excellent thermal performance, mechanical stability, and is compatible with automated assembly processes, supporting high-reliability designs.

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Can this MOSFET handle high current applications?

Yes, with a maximum drain current of 48A, it is designed to handle demanding high-current applications such as motor drives, power supplies, and battery management systems, within its specified thermal and electrical limits.

Does the IPB048N15N5LFATMA1 support energy-efficient system designs?

Absolutely. Its low on-resistance and efficient switching characteristics help reduce overall power losses, which is critical for designing energy-efficient systems in both industrial and commercial sectors.

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