IPT017N12NM6ATMA1 Overview
The IPT017N12NM6ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. Leveraging advanced trench technology, this device delivers low on-state resistance and robust switching behavior, supporting high efficiency in systems where power loss must be minimized. Its compact SuperSO8 package enables high-density board layouts, making it a strong candidate for space-constrained designs. This transistor is engineered to offer superior reliability, consistent performance, and flexibility in a wide range of electronic circuits. For further details on this and related components, please visit IC Manufacturer.
IPT017N12NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) | 120 A |
| On-State Resistance (RDS(on)) | 1.7 m?? |
| Gate Charge (Qg) | 102 nC |
| Package Type | SuperSO8 |
| Operating Temperature Range | -55??C to +175??C |
| Mounting Style | Surface Mount (SMD/SMT) |
IPT017N12NM6ATMA1 Key Features
- Ultra-low on-resistance of 1.7 m??, enabling minimal conduction losses and supporting high efficiency in power delivery systems.
- High continuous drain current rating of 120 A, making it suitable for applications with demanding power requirements.
- Robust 120 V drain-source voltage capability, ensuring safe operation in industrial and automotive environments.
- SuperSO8 package supports high-density PCB layouts, saving valuable board space for compact system designs.
- Wide operating temperature range from -55??C to +175??C enhances long-term reliability in harsh operating conditions.
- Optimized gate charge for efficient switching, reducing switching losses in high-frequency applications.
IPT017N12NM6ATMA1 Advantages vs Typical Alternatives
This power MOSFET stands out due to its ultra-low on-resistance and high current handling in a compact package, offering a compelling combination of efficiency and board space savings. Compared to typical alternatives, the device??s optimized gate charge and robust voltage rating provide enhanced switching performance, reliability, and thermal stability??making it a preferred solution for both industrial and high-efficiency power conversion applications.
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Typical Applications
- Switching Power Supplies: Ideal for use in high-efficiency DC-DC or AC-DC converters, where low conduction losses and reliable switching are critical to system performance and energy savings.
- Motor Control Circuits: Well-suited for industrial and automotive motor drivers requiring high current capability and fast switching for precise speed and torque control.
- Battery Management Systems: Supports robust protection and low-loss switching in lithium-ion battery packs, contributing to longer battery life and improved safety.
- Load Switches and Protection: Useful in circuit protection and load switching designs where low on-resistance and thermal reliability are essential for safeguarding sensitive electronics.
IPT017N12NM6ATMA1 Brand Info
The IPT017N12NM6ATMA1 is manufactured by a leading supplier of advanced power semiconductors, known for delivering innovative solutions for industrial and automotive markets. This component is part of a portfolio focused on maximizing energy efficiency and reliability in high-current switching applications. Its design leverages state-of-the-art trench MOSFET technology, reflecting the brand??s commitment to quality, performance, and robust product engineering for mission-critical electronic systems.
FAQ
What makes the IPT017N12NM6ATMA1 suitable for high-efficiency power supplies?
Its exceptionally low on-resistance minimizes energy lost during conduction, directly improving overall efficiency. Combined with a high current rating and optimized gate charge, the device is well-suited for switching power supplies where thermal management and conversion efficiency are top priorities.
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Can this MOSFET handle harsh environmental conditions?
Yes, the device is designed to operate reliably over a wide temperature range from -55??C to +175??C. This broad range makes it ideal for use in harsh industrial settings or under automotive hood environments where temperature extremes are common.
How does the SuperSO8 package benefit compact designs?
The SuperSO8 surface-mount package allows for high current density while saving PCB space. This facilitates more compact and lightweight designs, which is particularly beneficial in applications where board real estate is at a premium or system miniaturization is a key goal.
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Is the IPT017N12NM6ATMA1 suitable for fast switching applications?
Yes, its optimized gate charge ensures efficient and rapid switching, reducing switching losses. This makes it an excellent choice for high-frequency converters, motor drives, and other circuits requiring quick response times and minimal power dissipation.
In what types of systems is this N-channel MOSFET commonly implemented?
The device is commonly found in industrial motor control, battery management systems, power supply units, and electronic protection circuits. Its combination of high current capability, low on-resistance, and robust packaging supports its integration into a variety of demanding electronic applications.
