IAUT300N10S5N014ATMA1 Overview
The IAUT300N10S5N014ATMA1 is a high-performance MOSFET designed to deliver robust switching capabilities for demanding industrial and automotive applications. With advanced silicon technology and optimized packaging, this device offers outstanding efficiency, low RDS(on), and high current handling in a compact TO-220-3 package. Its design supports reliable operation under harsh conditions, making it suitable for power management, motor drives, and other critical systems. Engineers and sourcing professionals can count on its consistent performance and streamlined integration, maximizing both system reliability and energy savings. IC Manufacturer
IAUT300N10S5N014ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | 100 V |
| Maximum Continuous Drain Current (ID) | 300 A |
| RDS(on) (Max at VGS=10V) | 1.4 m?? |
| Package Type | TO-220-3 |
| Polarity | N-Channel |
| Mounting Style | Through Hole |
| Operating Temperature Range | -55??C to 175??C |
IAUT300N10S5N014ATMA1 Key Features
- Ultra-low RDS(on) of 1.4 m??, enabling minimal conduction losses and improved energy efficiency in high-current circuits.
- High current handling capacity up to 300 A, supporting demanding loads and robust system performance.
- 100 V maximum drain-source voltage, suitable for a wide range of industrial and automotive power switching applications.
- TO-220-3 package providing excellent thermal management for reliable long-term operation in harsh environments.
IAUT300N10S5N014ATMA1 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device offers significantly lower RDS(on) and higher current ratings, which translates into reduced power dissipation and enhanced operational efficiency. Its rugged TO-220-3 package and broad temperature range provide superior reliability and versatility, making it a preferred choice for high-demand industrial and automotive designs that require robust switching and superior thermal performance.
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Typical Applications
- Automotive motor control systems benefit from the IAUT300N10S5N014ATMA1’s high current capability and low RDS(on), ensuring efficient and reliable electric drive operation even under high-stress conditions.
- Industrial power supplies utilize this MOSFET for switching and regulation tasks, where high efficiency and thermal stability are critical for continuous operation.
- Battery management systems leverage its performance to handle high current charging and discharging cycles with minimal energy loss and maximum safety.
- DC-DC converters in both automotive and industrial settings employ this device to achieve compact designs with improved thermal handling and lower power losses.
IAUT300N10S5N014ATMA1 Brand Info
This MOSFET represents a culmination of advanced silicon engineering from a leading semiconductor manufacturer, delivering class-leading performance in a TO-220-3 package. Specifically designed for applications demanding high current, low resistance, and robust thermal characteristics, it underscores the brand??s commitment to innovation and reliability in power management solutions. Engineers can trust this product for applications where durability and efficiency are paramount.
FAQ
What is the maximum current the IAUT300N10S5N014ATMA1 can continuously handle?
This device supports a maximum continuous drain current of 300 A, making it suitable for high-power circuits in automotive and industrial systems where large currents must be switched reliably and efficiently.
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What type of package does this MOSFET use, and why is it beneficial?
The product is housed in a TO-220-3 package, which offers excellent heat dissipation and is widely used for its mechanical robustness. This helps maintain stable operation at high currents and temperatures, simplifying thermal management.
Is the IAUT300N10S5N014ATMA1 suitable for automotive applications?
Yes, its 100 V voltage rating, high current capability, and wide operating temperature range make it ideal for automotive uses such as motor drive control, power distribution, and battery management systems where reliability is critical.
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What are the main efficiency benefits of using this MOSFET in power conversion?
The ultra-low RDS(on) of 1.4 m?? minimizes conduction losses in high-current paths, directly improving system efficiency and reducing heat generation, which is especially valuable in power conversion and battery-powered designs.
Can this device operate in extreme temperature environments?
Absolutely. With an operating temperature range from -55??C to 175??C, it is engineered to perform reliably in harsh industrial and automotive environments where wide temperature fluctuations are common.
