ISC044N15NM6ATMA1 Overview
The ISC044N15NM6ATMA1 is a high-performance N-channel MOSFET optimized for power management and switching applications. Designed for demanding environments, this device offers low on-state resistance and robust thermal performance, supporting efficient power conversion and distribution. Its advanced construction ensures consistent, reliable operation in industrial, automotive, and other high-reliability sectors. This component is ideally suited for engineers seeking a dependable solution with a compact footprint and high efficiency. For more details on product sourcing and manufacturer support, visit IC Manufacturer.
ISC044N15NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-channel MOSFET |
| Maximum Continuous Drain Current | 44 A |
| Drain-Source Voltage (VDS) | 150 V |
| On-State Resistance (RDS(on)) | 4.4 m?? |
| Package / Case | TO-220 FullPAK (through hole) |
| Polarity | N-Channel |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide Semiconductor Field Effect Transistor) |
| Configuration | Single |
ISC044N15NM6ATMA1 Key Features
- Low RDS(on) of 4.4 m?? enables minimal conduction losses, increasing system efficiency in power conversion circuits.
- High voltage capability up to 150 V allows reliable operation in industrial and automotive environments where voltage transients are common.
- TO-220 FullPAK package provides excellent thermal management and facilitates straightforward integration in through-hole assemblies.
- Maximum continuous drain current of 44 A supports high-current designs, making it suitable for demanding load switching applications.
ISC044N15NM6ATMA1 Advantages vs Typical Alternatives
This device stands out with its combination of low on-state resistance and high drain current capability, delivering greater energy efficiency and reduced heat generation compared to standard MOSFETs. Its robust TO-220 FullPAK package ensures enhanced thermal dissipation, promoting higher reliability and longer service life in challenging environments. These benefits make it a compelling choice for engineers focused on power density and operational stability.
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Typical Applications
- Switch mode power supplies (SMPS): The ISC044N15NM6ATMA1??s high current handling and low RDS(on) make it ideal for primary side switching in SMPS topologies, ensuring efficient energy conversion and reduced thermal stress.
- Motor drives: Its high drain current and voltage capability support robust, efficient control of DC motors in industrial automation and automotive systems.
- Battery management systems: The device??s reliable performance under high current loads makes it suitable for battery protection and charging circuits where efficiency and safety are priorities.
- DC-DC converters: The MOSFET??s efficiency and thermal performance contribute to stable voltage regulation and compact converter designs in telecom and industrial power supplies.
ISC044N15NM6ATMA1 Brand Info
The ISC044N15NM6ATMA1 represents a commitment to quality and performance in the power semiconductor market. Built using advanced MOSFET technology, this product is engineered to meet the rigorous demands of modern power management and switching systems. Its robust design and well-established package standard ensure compatibility and ease of integration in diverse applications. Sourcing this part guarantees access to a component optimized for efficiency, reliability, and longevity in industrial and automotive environments.
FAQ
What type of applications benefit most from using the ISC044N15NM6ATMA1?
This N-channel MOSFET is particularly well-suited for high-efficiency power management, such as switch mode power supplies, motor drives, battery management, and DC-DC converters. Its low RDS(on) and high drain current capability provide tangible benefits in these demanding environments.
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How does the TO-220 FullPAK package improve thermal management?
The TO-220 FullPAK package offers a larger surface area and robust construction, which enhances heat dissipation. This design helps maintain lower device junction temperatures during operation, supporting better reliability and extended operational life in high-power applications.
Is the ISC044N15NM6ATMA1 suitable for automotive designs?
Yes, its high voltage rating and robust current handling make it appropriate for automotive switching and control circuits. It provides the necessary electrical and mechanical robustness required for use in harsh automotive environments.
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What mounting method is supported by this MOSFET?
This device is designed for through-hole mounting, which offers strong mechanical stability and reliable electrical connections??ideal for industrial and automotive assemblies where vibration and thermal cycling are considerations.
What are the main advantages of its low on-state resistance?
A low on-state resistance (RDS(on)) minimizes power loss during conduction, which leads to improved overall efficiency, reduced heat generation, and the potential for more compact and cost-effective thermal management solutions in system design.
