ISC151N20NM6ATMA1 N-Channel MOSFET, 150V 20A, TO-220 Package, Power Transistor

ISC151N20NM6ATMA1 Overview

The ISC151N20NM6ATMA1 is a robust N-channel MOSFET designed for demanding industrial and power management applications. With a maximum drain-source voltage of 200V and a drain current capability of up to 150A, this device delivers excellent efficiency and thermal performance. Its low on-resistance and trench technology enable fast switching, making it ideal for applications requiring high-speed operation and minimal power loss. The device is provided in a TO-220-3 package, ensuring straightforward integration into a wide range of circuit designs. For more details, visit IC Manufacturer.

ISC151N20NM6ATMA1 Technical Specifications

ISC151N20NM6ATMA1 Key Features

• High current handling up to 150A enables efficient operation in large power systems, reducing thermal stress and extending system life.
• Low R_DS(on) of 15m?? minimizes conduction losses, resulting in improved energy efficiency and reduced heat generation.
• 200V drain-source voltage rating supports reliable operation in high-voltage circuits, providing design flexibility for engineers.
• Advanced trench technology ensures faster switching speeds, which is critical in applications demanding quick response times and reduced switching losses.
• TO-220-3 package offers robust mechanical stability and ease of integration for both prototyping and high-volume production environments.

ISC151N20NM6ATMA1 Advantages vs Typical Alternatives

This device stands out due to its combination of high current capability, low on-resistance, and advanced trench technology. These attributes improve overall efficiency and reliability compared to standard MOSFETs in similar voltage classes. Its robust TO-220-3 packaging and through-hole mounting further enhance durability and ease of assembly for industrial-grade solutions.

Typical Applications

• Power supplies and converters: The device??s high voltage and current ratings make it suitable for use in switch-mode power supplies, DC-DC converters, and industrial power management systems requiring efficient, high-speed switching and low heat dissipation.
• Motor control circuits: Its fast switching and high current handling are ideal for driving motors in industrial automation, robotics, and electric vehicles.
• Battery management systems: Provides reliable switching and protection functions in large-scale battery packs, ensuring safety and performance in energy storage solutions.
• Inverters and UPS systems: Supports efficient power conversion and backup applications, helping maintain stable output in mission-critical environments.

ISC151N20NM6ATMA1 Brand Info

This product is part of a specialized lineup of power MOSFETs engineered for high reliability and performance in industrial and commercial applications. The ISC151N20NM6ATMA1 exemplifies the brand??s focus on delivering components with superior efficiency, robust thermal characteristics, and advanced manufacturing technology. Designed for integration into a wide range of electronic systems, it supports engineers in achieving optimal power management and system dependability.

FAQ

What is the maximum drain current supported by the ISC151N20NM6ATMA1?

The device supports a continuous drain current of up to 150A. This makes it well-suited for high-power applications where managing large currents reliably and efficiently is essential for system stability and longevity.

Which package type is used, and what benefits does it offer?

The MOSFET is offered in a TO-220-3 package, which provides excellent thermal performance and mechanical strength. This package type is widely used for its ease of mounting and capability to dissipate heat effectively in demanding applications.

What technology underpins the ISC151N20NM6ATMA1??s performance?

Utilizing trench MOSFET technology, the device achieves low on-resistance and fast switching characteristics. This results in higher efficiency and reduced power losses, which are critical for modern power management solutions.

For which voltage range is this MOSFET suitable?

The component is rated for a maximum drain-source voltage of 200V, enabling its use in circuits operating at high voltages such as industrial power supplies, motor drives, and inverter systems.

How does the low on-resistance benefit system designers?

A low R_DS(on) of 15m?? reduces conduction losses and heat generation during operation. This improves overall system energy efficiency and simplifies thermal management, allowing for more compact and cost-effective designs.