IPB025N08N3GATMA1 N-Channel MOSFET, 80V 2.5m??, TO-220 Package

  • Serves as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • Features an N-channel design, which allows for faster switching performance and lower on-resistance.
  • Compact package simplifies PCB layout and can help reduce overall board space requirements.
  • Well-suited for use in power management or motor control applications, supporting stable circuit operation.
  • Manufactured to ensure consistent performance and reliability in demanding environments.
Infineon logo
产品上方询盘

IPB025N08N3GATMA1 Overview

The IPB025N08N3GATMA1 is an advanced N-channel MOSFET engineered for high-performance power management and switching. With its optimized design, it delivers low on-resistance and robust current handling, making it ideal for industrial, automotive, and high-efficiency applications. Its compact D2PAK package supports efficient thermal management, while the device??s voltage and current ratings enable reliable operation in demanding environments. The IPB025N08N3GATMA1 stands out as a versatile solution for engineers seeking a dependable component for power conversion and control. For more technical resources, visit IC Manufacturer.

IPB025N08N3GATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)80 V
Continuous Drain Current (ID)120 A
RDS(on) (Max)2.5 m??
Gate Charge (Qg)138 nC
Package / CaseD2PAK (TO-263-3)
Mounting TypeSurface Mount
Operating Temperature Range-55??C to +175??C
PolarityN-Channel

IPB025N08N3GATMA1 Key Features

  • Ultra-low RDS(on): Maximizes energy efficiency by minimizing conduction losses, critical for power-sensitive designs.
  • High drain current capability: Supports demanding loads, enhancing system robustness and reliability in high-current environments.
  • Wide operating temperature range: Ensures consistent performance from -55??C to +175??C, suitable for harsh industrial and automotive conditions.
  • D2PAK (TO-263-3) package: Enables efficient surface mounting and superior heat dissipation, facilitating compact and thermally optimized PCB layouts.

IPB025N08N3GATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET offers a combination of low on-resistance and high current rating, giving it a distinct edge in efficiency and power density over many standard alternatives. Its D2PAK package further supports effective heat management and reliable surface mounting. The device??s broad temperature range and robust switching properties make it highly dependable for critical industrial and automotive uses, where reliability and performance are paramount.

Typical Applications

  • Power switching for industrial motor drives: Ensures efficient and reliable control of high-current loads, minimizing energy losses and improving operational stability in factory automation systems.
  • Automotive powertrain modules: Suitable for electric or hybrid vehicle applications demanding high current and ruggedness, contributing to improved vehicle efficiency and safety.
  • DC-DC converters for telecom infrastructure: Delivers the low conduction losses and high reliability needed in continuous-operation telecom power supplies.
  • Battery management systems: Supports robust current control and efficient power handling in energy storage and distribution applications.

IPB025N08N3GATMA1 Brand Info

The IPB025N08N3GATMA1 is part of a comprehensive lineup of advanced power MOSFETs recognized for their efficiency and reliability. Designed for demanding industrial and automotive environments, this device offers engineers a robust solution for high-current switching and power conversion. Its blend of low on-resistance, high current handling, and thermal performance ensures optimal integration into a variety of modern electronic systems where precision and durability are required.

FAQ

What makes the IPB025N08N3GATMA1 suitable for high-current applications?

This device features a very low RDS(on) of 2.5 m?? and supports a continuous drain current of up to 120 A, enabling it to handle substantial loads with minimal energy loss. This makes it especially well-suited for power circuits requiring efficient and reliable current switching.

Is the IPB025N08N3GATMA1 appropriate for use in automotive systems?

Yes, its wide operating temperature range and robust D2PAK package make it an excellent choice for automotive applications. Its high current capability and reliability meet the stringent demands typically found in vehicle powertrain and body electronics.

How does the D2PAK (TO-263-3) package benefit thermal management?

The D2PAK package offers a large thermal pad that enhances heat dissipation, helping maintain safe junction temperatures during high-power operation. This supports stable long-term performance and simplifies thermal design on the PCB.

📩 Contact Us

产品中间询盘

What are the main efficiency benefits of using this N-channel MOSFET?

Its ultra-low on-resistance reduces conduction losses, which directly boosts overall system efficiency. This is particularly beneficial in battery-powered and energy-sensitive systems where minimizing power loss is critical.

Can the IPB025N08N3GATMA1 be used in surface-mount production lines?

Absolutely. The surface-mount D2PAK package is designed for compatibility with standard automated assembly processes, streamlining production and ensuring robust, reliable board-level integration.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?