ISC046N13NM6ATMA1 Overview
The ISC046N13NM6ATMA1 is a high-performance N-channel MOSFET engineered for advanced power management applications. Combining low on-resistance and robust current handling, it enables efficient switching and energy savings in compact designs. This component is well-suited for automotive, industrial, and switching power supply systems, ensuring reliable operation under demanding conditions. Its compact PG-TDSON-8 package supports high-density layouts and thermal efficiency. For engineers seeking a dependable, efficient solution to manage high currents and voltages in space-constrained environments, this device delivers excellent electrical characteristics and proven reliability. Learn more at IC Manufacturer.
ISC046N13NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 130V |
| Continuous Drain Current (Id) | 46A |
| Drain-Source On-Resistance (Rds(on)) | 4.6 m?? |
| Gate Charge (Qg) | 45 nC |
| Power Dissipation (Pd) | 125W |
| Package / Case | PG-TDSON-8 |
| Operating Temperature Range | -55??C to +150??C |
ISC046N13NM6ATMA1 Key Features
- Low drain-source on-resistance of 4.6 m??, minimizing conduction losses and improving overall system efficiency in high-current applications.
- High current capability up to 46A allows support for demanding power circuits without compromising reliability or thermal performance.
- Wide drain-source voltage rating of 130V provides flexibility for use in medium to high voltage power conversion and motor control environments.
- Compact PG-TDSON-8 package enables high power density designs and efficient PCB layouts for space-constrained solutions.
ISC046N13NM6ATMA1 Advantages vs Typical Alternatives
This MOSFET stands out due to its combination of low Rds(on), high current handling, and compact packaging. These attributes allow for reduced power loss, improved thermal management, and greater design flexibility compared to many standard alternatives. Its robust voltage and operating temperature range further enhance system reliability and integration in demanding environments, making it a preferred choice for engineers.
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Typical Applications
- Switching power supplies: The device??s low on-resistance and high current rating make it ideal for use in high-efficiency DC-DC converters or switch-mode power supplies, where thermal management and power loss are critical.
- Motor drive circuits: Its robust voltage and current capabilities suit industrial motor drivers and automotive electric motor control systems.
- Battery management systems: Used in high-current battery protection and charging circuits within energy storage or electric vehicle platforms.
- Load switching: Suitable for reliable high-side or low-side switching in industrial automation and smart relay applications.
ISC046N13NM6ATMA1 Brand Info
The ISC046N13NM6ATMA1 is part of a well-established portfolio of advanced discrete power semiconductors. This product reflects the manufacturer??s focus on innovation in MOSFET technology, offering engineers a solution that meets stringent requirements for efficiency and reliability. Its design, packaging, and electrical performance are tailored to serve a wide range of power management and conversion needs in automotive, industrial, and consumer sectors.
FAQ
What is the main advantage of using the ISC046N13NM6ATMA1 in power switching applications?
The primary advantage lies in its low drain-source on-resistance and high current handling, which together reduce conduction losses and enable efficient power switching. This ensures cooler operation and enhanced system longevity in high-demand environments.
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Can this device be used in high-temperature environments?
Yes, the ISC046N13NM6ATMA1 is rated for operation from -55??C to +150??C, making it suitable for applications exposed to wide temperature variations, such as automotive engine compartments or industrial machinery.
Is this MOSFET suitable for compact PCB layouts?
Absolutely. The PG-TDSON-8 package is designed for high power density and offers a small footprint, allowing designers to fit powerful switching capability into space-constrained printed circuit boards without compromising performance.
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How does the low gate charge benefit system design?
A low total gate charge (Qg) of 45 nC means faster switching speeds and lower gate drive power consumption. This improves system response in high-frequency applications and reduces losses in the gate drive circuitry.
What types of circuits are best suited for this component?
The ISC046N13NM6ATMA1 excels in switching power supplies, motor drives, battery management systems, and load switching for industrial and automotive sectors, where high reliability, efficiency, and thermal performance are essential.
