IPB60R060P7ATMA1 Power MOSFET, 600V 63A, TO-220 Package

  • Serves as a power MOSFET, enabling efficient switching for power conversion and regulation tasks.
  • Features a TO-220 package, which allows straightforward mounting and effective heat dissipation.
  • The compact TO-220 footprint is suitable for designs where board space and thermal management are critical.
  • Commonly used in power supplies and motor control circuits, supporting stable operation under varying load conditions.
  • Designed for consistent performance, reducing risks of failure in demanding electrical environments.
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IPB60R060P7ATMA1 Overview

The IPB60R060P7ATMA1 is an advanced N-channel MOSFET designed for high-efficiency power switching applications. Featuring a robust TO-220 package and optimized for low on-resistance, this device enables reliable operation in demanding environments. Its voltage and current ratings support versatile use across industrial and commercial sectors, making it suitable for applications where high-speed switching, efficiency, and thermal management are critical. With its enhanced electrical performance, the component helps designers achieve greater energy savings and system reliability. For further details, visit IC Manufacturer.

IPB60R060P7ATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 41 A
Drain-Source On-Resistance (RDS(on)) 0.060 ??
Gate Charge (Qg) 97 nC
Package / Case TO-220-3
Polarity N-Channel
Operating Temperature Range -55??C to 150??C
Mounting Type Through Hole

IPB60R060P7ATMA1 Key Features

  • Low on-resistance of 0.060 ?? reduces conduction losses, enabling higher efficiency in switching circuits and minimizing heat generation.
  • High drain-source voltage rating of 600 V supports operation in high-voltage systems, ensuring suitability for industrial and power conversion applications.
  • Robust continuous drain current capability of 41 A allows the device to handle substantial load demands, enhancing reliability in power circuits.
  • Compact TO-220 package offers ease of mounting and efficient heat dissipation, simplifying integration into existing designs.
  • Wide operating temperature range from -55??C to 150??C provides flexibility and stability in harsh environments.
  • Optimized gate charge (97 nC) supports faster switching speeds, improving response times and overall system performance.

IPB60R060P7ATMA1 Advantages vs Typical Alternatives

Compared to standard power MOSFETs, this device offers a compelling combination of low on-resistance, high voltage capability, and significant current handling. This results in lower conduction losses, improved thermal performance, and greater reliability for end applications. Its optimized gate charge allows for efficient high-speed switching, distinguishing it from alternatives that may lack such balanced electrical characteristics.

Typical Applications

  • Switch-mode power supplies (SMPS): The device is ideal for primary and secondary side switching in SMPS topologies, offering high efficiency and robustness for industrial and commercial designs.
  • Motor drives: Suitable for use in motor control circuits where reliable high-voltage and high-current switching is required for AC or DC motors.
  • Uninterruptible power supplies (UPS): Provides efficient power switching in backup power systems, supporting stable operation during power transitions.
  • Inverters and power conversion: Enables efficient DC-AC or AC-DC power conversion in renewable energy and industrial automation systems.

IPB60R060P7ATMA1 Brand Info

This device is part of a high-performance MOSFET portfolio recognized for delivering energy-efficient switching solutions. Its advanced silicon technology ensures dependable operation in challenging environments, while the TO-220 package supports industry-standard integration. Designed for demanding power applications, this product continues to set benchmarks in efficiency, reliability, and operational flexibility.

FAQ

What is the main advantage of using this MOSFET in power supply applications?

The key advantage is its low on-resistance, which minimizes power loss during switching, thereby improving the overall efficiency of power supply designs. This characteristic is especially beneficial in high-current, high-voltage environments where efficiency is critical.

Can this device be used in both industrial and commercial settings?

Yes, the robust voltage and current ratings, along with its wide operating temperature range, make it suitable for a broad spectrum of industrial and commercial power management and conversion applications.

What mounting options are available for this MOSFET?

It comes in a standard TO-220-3 through-hole package, which provides secure mounting, effective heat dissipation, and straightforward integration into existing circuit boards or heatsink assemblies.

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产品中间询盘

How does the gate charge value impact switching speed?

The optimized gate charge of 97 nC allows for faster switching transitions, which not only improves efficiency but also reduces switching losses. This is especially important in high-frequency applications where rapid response is required.

Is the device suitable for use in harsh environmental conditions?

Yes, with an operating temperature range of -55??C to 150??C, it is engineered to perform reliably in a wide variety of environmental conditions, making it suitable for demanding industrial and outdoor applications.

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