BSC023N08NS5SCATMA1 Overview
The BSC023N08NS5SCATMA1 is an advanced N-channel MOSFET designed for high-efficiency switching in demanding power electronic applications. Its optimized specifications make it suitable for environments where low on-resistance and fast switching are essential. Manufactured in a compact SuperSO8 package, this device enables designers to achieve robust performance in applications such as power management, motor control, and DC-DC conversion. By combining low gate charge with high current handling, the BSC023N08NS5SCATMA1 provides a balance of power density and thermal performance, allowing for compact designs without sacrificing reliability. IC Manufacturer
BSC023N08NS5SCATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 80V |
| Continuous Drain Current (ID) | 120A |
| RDS(on) (Max) | 2.3 m?? @ 10V |
| Gate Charge (Qg) | 69 nC @ 10V |
| Power Dissipation (PD) | 300W |
| Package / Case | SuperSO8 (PG-TDSON-8) |
| Operating Temperature Range | -55??C to +175??C |
BSC023N08NS5SCATMA1 Key Features
- Extremely low RDS(on) of 2.3 m?? ensures minimal conduction losses, maximizing system efficiency in power switching circuits.
- High continuous drain current capability (up to 120A) supports demanding loads, ideal for motor drives and industrial automation.
- Low total gate charge (69 nC) enables rapid switching, reducing switching losses and improving overall system response time.
- Robust power dissipation rating up to 300W allows for reliable operation in high-power density designs.
- Compact SuperSO8 package streamlines PCB layout and thermal management, supporting higher integration in space-constrained systems.
BSC023N08NS5SCATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device delivers a lower on-resistance and higher current handling, resulting in decreased conduction and switching losses. Its fast switching capability and efficient thermal design offer improved reliability and long-term stability in high-performance applications. These characteristics make it a superior choice for engineers seeking optimized efficiency and compact integration.
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Typical Applications
- DC-DC converters: The low RDS(on) and high current rating make it ideal for synchronous rectification and switching stages in high-efficiency DC-DC power supplies.
- Motor control: Suitable for industrial and automotive motor drives requiring fast switching and robust power handling.
- Power management modules: Used in server, telecom, or industrial systems where efficient voltage regulation is critical.
- Battery management systems: Supports high-current switching in energy storage and distribution circuits.
BSC023N08NS5SCATMA1 Brand Info
The BSC023N08NS5SCATMA1 is part of a high-performance power MOSFET portfolio, engineered to address the needs of modern power electronics. Its advanced silicon technology and SuperSO8 package are designed for maximum efficiency, reliability, and ease of integration. This product is trusted by engineers and system designers for use in critical applications where performance and durability are paramount.
FAQ
What package type is used for the BSC023N08NS5SCATMA1 and why is it beneficial?
This device is housed in a SuperSO8 (PG-TDSON-8) package, which provides enhanced thermal management and allows for higher current densities compared to traditional packages. Its compact footprint also helps in reducing PCB space requirements.
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How does the low RDS(on) value benefit system designers?
The low RDS(on) of 2.3 m?? minimizes conduction losses, leading to improved energy efficiency and reduced heat generation in the system. This is especially valuable in applications demanding high efficiency and thermal performance.
What types of systems are best suited to use this MOSFET?
It is an excellent choice for high-efficiency DC-DC converters, motor drives, power management modules, and battery management systems??applications where low switching losses and high current capability are critical.
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What is the operating temperature range for reliable use?
The device operates reliably over a wide temperature range from -55??C to +175??C, making it suitable for both industrial and automotive environments with demanding thermal requirements.
What key characteristics enable fast switching performance?
Its low total gate charge (69 nC) and optimized silicon design allow for rapid switching speeds, which significantly reduce switching losses and enable higher frequency operation in switching power supplies and motor controllers.
