IPT017N10NF2SATMA1 Overview
The IPT017N10NF2SATMA1 is a high-performance N-channel MOSFET optimized for demanding power management and switching applications. Designed for efficiency and robust operation, this device combines low RDS(on) with high current handling, making it suitable for industrial and automotive environments where reliability and precision are essential. Its advanced process technology ensures superior switching characteristics, reduced losses, and enhanced thermal stability. Sourcing specialists and engineers seeking a dependable solution for power conversion or motor control will benefit from its streamlined integration and performance. For additional details, visit IC Manufacturer.
IPT017N10NF2SATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (max) | 1.7 m?? |
| Gate Charge (Qg) | Not specified |
| Package Type | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55??C to +175??C |
IPT017N10NF2SATMA1 Key Features
- Ultra-low RDS(on) of 1.7 m?? enables minimal conduction losses, improving overall energy efficiency in power circuits.
- High drain current capability supports demanding industrial and automotive loads, reducing the need for parallel devices.
- 100 V breakdown voltage provides robust margin for transient protection and switching reliability.
- Wide operating temperature range (-55??C to +175??C) ensures reliable function in harsh or thermally challenging environments.
- Standard TO-220-3 package allows easy integration into existing designs and supports efficient thermal management.
- Through-hole mounting offers mechanical strength and secure attachment for high-power applications.
IPT017N10NF2SATMA1 Advantages vs Typical Alternatives
This device stands out due to its exceptionally low RDS(on) and high current capability, which together reduce power losses and improve system efficiency compared to standard MOSFETs. Its extended temperature tolerance and 100 V voltage rating offer enhanced reliability and application flexibility. The TO-220-3 package further simplifies thermal design and integration, making it a compelling choice for engineers seeking robust performance and cost-effective power switching solutions.
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Typical Applications
- DC-DC converters: The combination of low RDS(on) and high current handling makes this MOSFET ideal for use in high-efficiency DC-DC power supplies, minimizing losses and supporting compact, thermally stable designs.
- Motor control circuits: Suitable for industrial and automotive motor drivers, offering precise switching and robust handling of inductive loads.
- Battery management systems: An excellent choice for protection and switching in high-current battery packs due to its reliability and voltage headroom.
- Power switching modules: Enables efficient switching in relay replacement and solid-state switching modules for industrial automation.
IPT017N10NF2SATMA1 Brand Info
The IPT017N10NF2SATMA1 represents a robust solution from a leading semiconductor provider, focusing on advanced MOSFET technology for power management applications. Its design leverages proven process technology to deliver outstanding conduction performance, reliability, and easy integration in a wide range of industrial and automotive systems. This part is recognized for consistent quality and is widely used in demanding environments where efficiency and operational stability are critical.
FAQ
What makes the IPT017N10NF2SATMA1 suitable for high-power applications?
The exceptionally low on-resistance (RDS(on)) of 1.7 m?? and a high current rating of 120 A allow this MOSFET to handle significant power loads with minimal energy loss, making it ideal for high-power converters and motor drives.
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How does the package type benefit engineers during design and assembly?
The TO-220-3 through-hole package is widely used in the industry, offering straightforward PCB mounting, mechanical stability, and excellent thermal performance. This simplifies both prototyping and volume production in power electronics.
Can the IPT017N10NF2SATMA1 operate in harsh environments?
Yes, the device supports operation from -55??C to +175??C, making it reliable for use in industrial and automotive systems exposed to wide temperature fluctuations or harsh ambient conditions.
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What applications gain the most from this MOSFET??s features?
Power supplies, motor controllers, battery management, and industrial automation modules benefit from the device??s low loss, high current handling, and robust voltage tolerance, supporting efficient and reliable designs.
Does this device require special mounting or handling considerations?
No special mounting is required beyond standard TO-220-3 through-hole practices. Proper heatsinking is recommended to leverage its high current capability and ensure reliable thermal management during operation.
