IPB120P04P4L03ATMA2 Overview
The IPB120P04P4L03ATMA2 is a high-performance power MOSFET optimized for efficient switching and robust industrial applications. Designed for demanding environments, it delivers low on-state resistance and high current handling, making it well-suited for power management, motor drives, and high-efficiency switching circuits. Its advanced trench technology ensures minimal conduction losses and enhanced thermal performance, supporting reliable operation in compact board layouts. With a focus on integration and durability, this device helps engineers design systems that meet stringent efficiency and reliability standards. For more details, visit IC Manufacturer.
IPB120P04P4L03ATMA2 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | P-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 120 A |
| On-State Resistance (RDS(on)) | 3.1 m?? (max at VGS = -10 V) |
| Gate-Source Voltage (VGS) | ?I20 V |
| Package | TO-220-3 |
| Power Dissipation (PD) | 300 W |
| Technology | Trench |
IPB120P04P4L03ATMA2 Key Features
- Low on-resistance of 3.1 m?? ensures reduced conduction losses, increasing overall power conversion efficiency.
- High continuous drain current rating of 120 A enables use in applications requiring robust current handling, such as motor control and power distribution.
- Trench technology provides enhanced switching performance and improved thermal characteristics, supporting reliable operation in compact designs.
- Wide gate-source voltage range (?I20 V) adds design flexibility and ensures compatibility with a variety of drive circuitry.
IPB120P04P4L03ATMA2 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device stands out with its combination of low RDS(on), high current capability, and optimized trench construction. The result is superior efficiency and reliable performance in demanding industrial and automotive environments. Its robust power dissipation and compact TO-220-3 package further enhance integration potential, enabling engineers to build more efficient, space-saving systems with increased reliability and operational longevity.
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Typical Applications
- Motor Control and Drive Circuits: The device??s high current rating and low on-resistance make it ideal for driving motors in industrial automation, robotics, and electric vehicles, ensuring efficient power delivery and reduced heat generation.
- Power Management Systems: Widely used in DC-DC converters and power distribution networks where low conduction losses are crucial for system efficiency.
- Switching Power Supplies: Suitable for synchronous rectification and high-frequency switching applications, supporting compact and energy-efficient PSU designs.
- Battery Protection and Management: Provides effective switching and protection in battery-powered systems, helping to extend system life and maintain safe operation under heavy loads.
IPB120P04P4L03ATMA2 Brand Info
The IPB120P04P4L03ATMA2 is manufactured by a leading supplier of power semiconductors, known for delivering reliable and high-efficiency devices tailored for industrial and automotive markets. This product combines advanced trench MOSFET technology with a rugged TO-220-3 package, meeting the requirements of designers seeking dependable performance in power management and control systems. Its brand pedigree ensures compliance with stringent quality standards, supporting critical applications where stability, efficiency, and long-term reliability are mandatory.
FAQ
What is the maximum drain-source voltage supported by this device?
The maximum drain-source voltage is rated at 40 V, enabling the device to handle a wide range of low-voltage industrial and automotive power switching applications while maintaining safe operation.
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How does the on-resistance specification impact system efficiency?
A low on-state resistance of 3.1 m?? reduces conduction losses, resulting in less heat generation and higher overall efficiency. This is especially valuable in applications where power savings and thermal management are priorities.
What package type is used, and why is it important for thermal performance?
This MOSFET uses the TO-220-3 package, which offers excellent thermal dissipation and allows for straightforward mounting with heat sinks, making it suitable for high-current, high-power designs where heat management is critical.
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Can this device be used for both switching and linear mode operation?
Yes, it is suitable for both switching and linear mode operation, thanks to its trench technology and robust electrical characteristics. However, designers should always ensure operation within the recommended parameters to maintain reliability.
Is the device suitable for automotive applications?
The rugged design, high current rating, and low on-resistance make it a strong choice for automotive applications such as electric powertrains, battery management, and auxiliary motor controls, where efficiency and durability are essential.
