IPB038N12N3GATMA1 Overview
The IPB038N12N3GATMA1 is a high-performance N-channel MOSFET designed for industrial and automotive power management. Engineered to handle demanding switching and amplification tasks, this robust device delivers optimized efficiency, low RDS(on), and high current capabilities. Its advanced process technology ensures reliability in harsh environments, making it a preferred choice for engineers seeking stable and efficient solutions. For detailed sourcing and product data, visit the IC Manufacturer website.
IPB038N12N3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120V |
| Continuous Drain Current (ID) | 100A |
| RDS(on) (max) | 3.8 m?? |
| Gate-Source Voltage (VGS) | ?I20V |
| Package | TO-263 (D2PAK) |
| Power Dissipation (PD) | 300W |
| Operating Temperature Range | -55??C to +175??C |
IPB038N12N3GATMA1 Key Features
- Ultra-low RDS(on) of 3.8 m?? maximizes efficiency, enabling minimal conduction losses in high-current circuits.
- High continuous drain current rating enhances power density, supporting robust system designs for demanding industrial and automotive applications.
- Wide operating temperature range from -55??C to +175??C ensures stable performance in harsh or fluctuating environmental conditions.
- Rugged TO-263 (D2PAK) package provides secure board mounting and efficient thermal management for reliable long-term operation.
IPB038N12N3GATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out from typical alternatives by offering a combination of low on-resistance, high current capability, and broad temperature tolerance. Such attributes contribute to lower system power losses, improved thermal performance, and increased reliability in mission-critical designs, making it a superior choice for energy-efficient and durable power switching solutions.
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Typical Applications
- DC-DC converters and synchronous rectification: The device??s low on-resistance and high current handling make it ideal for use in high-efficiency DC-DC conversion stages, where minimizing losses is critical.
- Motor control systems: Its robust power and thermal characteristics support demanding electric motor drive circuits in industrial and automotive environments.
- Switching power supplies: Suitable for primary and secondary side switching in SMPS, delivering reliable performance across a range of input voltages.
- Load switching and protection: The MOSFET??s high-current capacity and rugged package allow it to serve as a protected load switch in battery management and protection circuits.
IPB038N12N3GATMA1 Brand Info
This device is part of a trusted portfolio of advanced MOSFETs, engineered for high efficiency and durability in demanding power management roles. Its optimized silicon technology and robust D2PAK package reflect the brand??s commitment to quality and performance, making it a dependable solution for engineers and system integrators requiring industrial-grade switching and amplification components.
FAQ
What is the key benefit of using this MOSFET in high-current applications?
The exceptionally low RDS(on) of 3.8 m?? allows for minimal conduction losses, which is essential for high-current circuits. This translates to higher efficiency and less heat generation, benefiting overall system reliability and performance.
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Is the device suitable for automotive environments?
Yes, the wide operating temperature range and robust TO-263 (D2PAK) package make it well-suited for automotive power management, motor drives, and other applications requiring consistent performance under demanding thermal and environmental conditions.
How does the package type contribute to device reliability?
The TO-263 (D2PAK) package enables efficient heat dissipation and secure surface mounting. This design supports stable operation under high load and temperature stress, which is crucial for both industrial and automotive systems.
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Can this MOSFET be used in switching power supplies?
Absolutely. Its high voltage and current ratings, combined with low on-resistance, make it an excellent choice for use in switching power supplies, where efficiency and thermal management are paramount.
What precautions should be taken regarding gate voltage?
The gate-source voltage rating is ?I20V. It is important to ensure that gate drive circuits do not exceed this range to prevent device degradation or failure, especially during transient conditions or startup events.
