ISC007N04NM6ATMA1 Overview
The ISC007N04NM6ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power management applications. Designed for efficient switching and low conduction losses, this device supports robust operation in environments where reliability and efficiency are paramount. Its advanced silicon technology ensures low on-resistance and fast switching, making it ideal for modern electronic systems. With a compact surface-mount package, the ISC007N04NM6ATMA1 is well-suited for high-density PCBs and automated assembly lines, delivering cost-effective performance and design flexibility for engineers and sourcing specialists. IC Manufacturer
ISC007N04NM6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Package / Case | PG-TDSON-8 |
| Drain-Source Voltage (Vds) | 40V |
| Continuous Drain Current (Id) | 75A |
| Drain-Source On-Resistance (Rds(on)) | 0.7 m?? |
| Gate Charge (Qg) | 33 nC |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55??C to +175??C |
ISC007N04NM6ATMA1 Key Features
- Ultra-low on-resistance (0.7 m??) minimizes power losses, enabling higher efficiency in switching applications and reducing heat generation.
- High continuous drain current capability (75A) supports demanding load conditions, making it suitable for industrial power supplies and motor control circuits.
- Fast switching performance, enabled by a low gate charge (33 nC), results in improved efficiency for high-frequency designs and reduced switching losses.
- Broad operating temperature range (-55??C to +175??C) ensures robust performance and reliability in harsh industrial environments.
ISC007N04NM6ATMA1 Advantages vs Typical Alternatives
With its combination of ultra-low on-resistance, high current handling, and fast switching characteristics, this MOSFET offers significant performance advantages over standard alternatives. Users benefit from reduced conduction and switching losses, greater thermal efficiency, and robust operation across a wide temperature range. The compact PG-TDSON-8 package further supports high-density layouts and automated assembly, streamlining integration in advanced applications.
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Typical Applications
- High-efficiency power conversion: The device??s low Rds(on) and high current capability make it ideal for DC-DC converters, synchronous rectifiers, and other power management circuits requiring minimal losses and reliable switching.
- Motor drive control: With its strong current handling and fast switching, this MOSFET is well-suited for driving inductive loads in motor control and industrial automation systems.
- Switching regulators: The device enables efficiency and thermal management in high-frequency switching power supplies, supporting compact and reliable designs.
- Battery management systems: Its robust design and low losses help optimize energy efficiency and reliability in battery-powered industrial electronics.
ISC007N04NM6ATMA1 Brand Info
The ISC007N04NM6ATMA1 is produced by a leading manufacturer specializing in high-performance power semiconductor solutions. This product exemplifies the brand??s commitment to innovation, quality, and reliability in the industrial electronics sector. By integrating advanced MOSFET technology, the device addresses the needs of designers seeking efficiency and robust operation for demanding applications. The brand??s reputation for delivering consistent, high-quality components ensures that engineers and procurement professionals can confidently specify this MOSFET in a wide range of projects.
FAQ
What package type does the ISC007N04NM6ATMA1 use, and why is this beneficial?
This device is housed in the PG-TDSON-8 package, which is a compact surface-mount format. This package supports efficient heat dissipation, allows for high-density assembly on PCBs, and is compatible with automated manufacturing processes, making it ideal for industrial and high-volume applications.
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How does the low Rds(on) value benefit power system designs?
The very low drain-source on-resistance (0.7 m??) significantly reduces conduction losses during operation. This leads to higher overall system efficiency, lower heat output, and the potential for smaller heatsinks or less thermal management, which can reduce both system size and cost.
Is the ISC007N04NM6ATMA1 suitable for high-current applications?
Yes, with a continuous drain current rating of 75A, this MOSFET is well-suited for high-current loads, such as those found in industrial power supplies, motor drives, and battery management systems. Its robust construction ensures reliable operation under demanding conditions.
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What are the main thermal and environmental advantages of this device?
The wide operating temperature range (-55??C to +175??C) allows this MOSFET to function reliably in harsh or variable environments. This makes it a strong choice for industrial, automotive, or other applications where exposure to extreme temperatures is expected.
Can the ISC007N04NM6ATMA1 be used in high-frequency switching applications?
Absolutely. Its low gate charge (33 nC) and fast switching capabilities enable efficient performance in high-frequency designs, such as switching regulators and synchronous rectifiers, where reducing switching losses and maximizing efficiency are critical design goals.
