BSC047N08NS3GATMA1 Overview
The BSC047N08NS3GATMA1 is a highly efficient N-channel MOSFET designed for demanding industrial and power management applications. Featuring low on-resistance and robust current handling, it provides optimal switching performance for engineers focused on energy efficiency and thermal reliability. Its compact SuperSO8 package supports space-constrained designs without compromising performance. This device is well-suited for applications requiring precise control and high-speed switching, making it a favored choice in modern power electronics. For more details, visit IC Manufacturer.
BSC047N08NS3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 120 A |
| On-Resistance (RDS(on)) | 4.7 m?? |
| Gate Charge (Qg) | 56 nC |
| Package | SuperSO8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55??C to +150??C |
BSC047N08NS3GATMA1 Key Features
- Ultra-low on-resistance of 4.7 m?? enables minimal conduction losses, maximizing power efficiency in high-current switching applications.
- High drain current capability (up to 120 A) supports robust power delivery for demanding industrial loads and automotive systems.
- Optimized gate charge ensures fast switching speeds, reducing switching losses and enabling higher frequency operation for compact, efficient designs.
- SuperSO8 surface-mount package provides a small footprint while maintaining excellent thermal performance, ideal for space-limited PCBs.
BSC047N08NS3GATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device delivers lower on-resistance and higher current capability, resulting in improved power efficiency and reduced heat generation. Its fast switching performance and compact SuperSO8 package offer significant benefits for designs prioritizing high integration, reliability, and energy savings in industrial and automotive applications.
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Typical Applications
- Power management modules in industrial automation, where low RDS(on) and high current handling are essential for efficient motor drives and robust power supplies.
- Automotive electronic control units (ECUs) requiring reliable, high-speed switching and thermal efficiency in a compact package.
- Switching regulators and DC-DC converters for telecommunications and server power systems demanding minimal conduction losses and high switching frequencies.
- Battery management systems in renewable energy storage, ensuring safe and efficient charge/discharge cycles under varying load conditions.
BSC047N08NS3GATMA1 Brand Info
This MOSFET is manufactured by a reputable supplier known for producing high-quality power semiconductor solutions. The device combines advanced trench technology with a compact SuperSO8 package, making it an excellent choice for engineers seeking reliable performance in energy-efficient and space-sensitive applications. Its proven track record in demanding environments further establishes its suitability for industrial, automotive, and power management projects.
FAQ
What is the maximum drain-source voltage supported by this MOSFET?
The device can handle a drain-source voltage of up to 80 V, making it suitable for a wide range of industrial and automotive power switching applications where higher voltage margins are required for safe operation.
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What benefits does the low on-resistance provide in real-world applications?
Low on-resistance minimizes conduction losses, allowing for improved power efficiency and reduced heat generation. This is especially valuable in high-current applications, as it contributes to system reliability and easier thermal management.
Is the SuperSO8 package suitable for high-density PCB designs?
Yes, the SuperSO8 surface-mount package is specifically designed to offer a compact footprint with efficient thermal characteristics, making it ideal for high-density PCB layouts and space-constrained environments.
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How does the gate charge value affect switching performance?
A moderate gate charge of 56 nC enables fast and efficient switching, reducing switching losses and supporting higher operating frequencies. This is advantageous in applications requiring rapid switching and high efficiency.
What types of applications are best suited for this power MOSFET?
The device is well-suited for power management modules, automotive control units, switching regulators, and battery management systems??any scenario where efficiency, high current capability, and reliable switching are essential requirements.
