IRF7769L1TRPBF Power MOSFET Transistor, Dual N-Channel, SO-8 Package

  • Serves as a MOSFET, enabling efficient switching and amplification in power management circuits.
  • Features a low on-resistance, which reduces power losses and improves overall energy efficiency in designs.
  • The device??s compact package helps save board space, making it suitable for high-density electronic assemblies.
  • Ideal for use in DC-DC converters, where it supports stable voltage regulation in compact power supplies.
  • Manufactured to meet consistent electrical performance standards, helping ensure circuit reliability over time.
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IRF7769L1TRPBF Overview

The IRF7769L1TRPBF is a high-performance dual N-channel MOSFET designed for demanding power management applications. Featuring advanced silicon technology, it offers low on-resistance and fast switching performance, making it ideal for applications requiring high efficiency and thermal reliability. Its compact Power56 package supports space-constrained designs, while robust construction ensures dependable performance in industrial and commercial environments. Sourcing specialists and engineers can rely on this solution for improved power density and system reliability. For more details, visit IC Manufacturer.

IRF7769L1TRPBF Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET (Dual)
Drain-Source Voltage (VDS) 30V
Continuous Drain Current (ID) 20A
RDS(on) (Max) 3.9 m?? @ 10V
Gate Charge (Qg) 23 nC
Package / Case Power56
Operating Temperature Range -55??C to +150??C
Configuration Dual Independent MOSFETs

IRF7769L1TRPBF Key Features

  • Low RDS(on): Minimizes conduction losses, boosting overall power efficiency for high-current circuits.
  • High Current Capability: Supports up to 20A continuous drain current, enabling robust performance in power conversion and switching roles.
  • Fast Switching Speed: Optimized gate charge allows rapid transitions, reducing switching losses and supporting high-frequency designs.
  • Compact Power56 Package: Space-saving footprint is ideal for densely populated PCBs, supporting advanced power system integration.

IRF7769L1TRPBF Advantages vs Typical Alternatives

This dual N-channel MOSFET stands out with its low on-resistance and fast switching, delivering improved power efficiency and thermal performance compared to many standard MOSFETs. The Power56 package enhances reliability in thermal management and allows higher power density, making it a superior choice for compact or high-performance designs. These attributes support robust, long-lasting operation in industrial and commercial power systems.

Typical Applications

  • DC-DC Converters: The low RDS(on) and high current capability make this device suitable for synchronous rectification and high-efficiency voltage regulation in DC-DC converters, where reduced losses are critical.
  • Motor Drives: Supports reliable switching and control in low-voltage motor drive applications, offering fast response and thermal stability.
  • Load Switches: Ideal for use as a high-current load switch in distributed power architectures, providing robust on/off control and low conduction loss.
  • Power Management Modules: Enables efficient power distribution and switching in complex systems, such as server motherboards or industrial automation equipment.

IRF7769L1TRPBF Brand Info

The IRF7769L1TRPBF is part of a proven family of dual N-channel MOSFETs, engineered to meet the requirements of modern, high-density power systems. Manufactured with stringent quality controls, it delivers consistent performance and reliability favored by leading OEMs and industrial designers. The Power56 package reflects a commitment to space efficiency and thermal management, ensuring this device integrates seamlessly into advanced electronic assemblies where both performance and footprint matter.

FAQ

What is the maximum voltage the IRF7769L1TRPBF can handle?

This dual MOSFET is rated for a maximum drain-source voltage of 30V, making it suitable for a wide range of low-voltage power management and switching applications.

How does the low RDS(on) benefit my design?

The device??s low on-resistance (as low as 3.9 m??) reduces conduction losses during operation, contributing to higher energy efficiency and lower heat generation in your system.

What type of package is used and why is it important?

The Power56 package offers a compact footprint with excellent thermal characteristics. This allows for high power density installations and reliable heat dissipation in demanding environments.

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Can I use this MOSFET for synchronous rectification?

Yes, its high current capability and low RDS(on) make it well-suited for synchronous rectification in DC-DC converters, where efficiency improvements are critical for performance.

Is the device suitable for industrial temperature ranges?

Absolutely. It operates across a broad temperature range from -55??C to +150??C, ensuring stable performance even in harsh industrial and commercial environments.

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