IPD80R450P7ATMA1 Power MOSFET, N-Channel, TO-252 Package

  • This device is designed for efficient power switching, enabling reduced energy loss in high-power circuits.
  • Low on-resistance improves current handling, resulting in minimized power dissipation during operation.
  • The compact package type allows for space-saving PCB layouts in densely populated electronic designs.
  • Ideal for use in power supplies or motor control systems, where reliable switching is essential for performance.
  • Manufactured with industry-standard processes to support consistent operation and long-term device stability.
Infineon logo
产品上方询盘

IPD80R450P7ATMA1 Overview

The IPD80R450P7ATMA1 is a power MOSFET designed for high-efficiency switching applications, especially in industrial and consumer systems requiring robust voltage management and thermal stability. Featuring advanced process technology and a low RDS(on), it offers enhanced performance for both continuous operation and rapid switching environments. This component is well-suited for engineers seeking reliable, space-efficient solutions in power conversion, motor drives, and automation systems. Discover more at IC Manufacturer.

IPD80R450P7ATMA1 Technical Specifications

Parameter Value
Device Type N-Channel Power MOSFET
Drain-Source Voltage (Vds) 800V
Continuous Drain Current (Id) 6.8A
RDS(on) (Max) 450 m??
Gate Charge (Qg) 31 nC
Package / Case TO-252 (DPAK)
Operating Temperature Range -55??C to +150??C
Mounting Type Surface Mount
Technology CoolMOS? P7

IPD80R450P7ATMA1 Key Features

  • High voltage tolerance up to 800V, providing robust performance in demanding power conversion circuits.
  • Low RDS(on) of 450 m?? minimizes conduction losses, promoting energy efficiency and reducing heat generation.
  • Compact TO-252 (DPAK) surface-mount package allows for space-saving PCB layout and higher power density in assemblies.
  • Wide operating temperature range from -55??C to +150??C ensures reliable operation in industrial and high-temperature environments.
  • Optimized gate charge of 31 nC enables faster switching, supporting high-frequency designs and improved dynamic response.

IPD80R450P7ATMA1 Advantages vs Typical Alternatives

This device stands out due to its combination of high voltage capability, low on-resistance, and efficient switching characteristics. Compared to standard power MOSFETs, it offers reduced conduction and switching losses, enhancing overall system efficiency. The advanced process technology and robust thermal performance further increase reliability in critical industrial and power supply applications. Its compact DPAK package also streamlines integration on densely populated boards.

Typical Applications

  • Switch mode power supplies (SMPS) for industrial and consumer electronics, where efficient voltage regulation and fast switching are crucial for stable operation and energy savings.
  • Motor control circuits in automation systems, benefiting from high voltage tolerance and efficient thermal management for reliable long-term use.
  • LED lighting drivers requiring robust MOSFETs to manage high voltages and currents while maintaining compact design footprints.
  • Power factor correction (PFC) stages in AC-DC converters, where low RDS(on) and optimized gate charge improve conversion efficiency.

IPD80R450P7ATMA1 Brand Info

The IPD80R450P7ATMA1 is part of the CoolMOS? P7 series, engineered for demanding high-voltage switching applications. It reflects the brand??s commitment to providing advanced MOSFET technology with a focus on efficiency, thermal stability, and easy integration for industrial, commercial, and consumer markets. Its design addresses the need for reliable, high-performance power components in modern electronics.

FAQ

What makes the IPD80R450P7ATMA1 suitable for high-voltage applications?

This device supports drain-source voltages up to 800V, allowing it to be used safely in circuits exposed to high line voltages or transients. Its robust construction and process technology ensure consistent performance under demanding electrical conditions.

How does the low RDS(on) benefit my design?

A low on-resistance of 450 m?? reduces conduction losses, which translates to less heat generation and improved energy efficiency. This can help lower system cooling requirements and boost reliability in thermally demanding environments.

Can the IPD80R450P7ATMA1 be used in surface-mount designs?

Yes, it is supplied in a TO-252 (DPAK) surface-mount package, making it well-suited for automated assembly processes and compact PCB layouts where space and ease of integration are important considerations.

📩 Contact Us

产品中间询盘

What kind of thermal performance does this MOSFET offer?

The device is rated for operation from -55??C to +150??C, supporting reliable function across wide temperature ranges. Its advanced design helps maintain stability and efficiency during prolonged or intensive operation in industrial settings.

In which types of applications does the IPD80R450P7ATMA1 excel?

It is ideal for switch mode power supplies, motor controls, LED drivers, and power factor correction circuits. Its high voltage rating, efficient switching, and compact form factor make it a versatile choice in both industrial and consumer electronics.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?