BSC057N08NS3GATMA1 N-Channel MOSFET, 80V 50A, OptiMOS S3, SuperSO8 Package

  • Serves as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • Features an N-channel configuration, important for handling higher currents with low on-resistance.
  • Compact surface-mount package helps save board space, supporting dense PCB layouts in modern designs.
  • Ideal for use in power management systems, providing reliable operation in DC-DC converters or load switches.
  • BSC057N08NS3GATMA1 is tested for consistent electrical performance, supporting long-term device reliability.
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产品上方询盘

BSC057N08NS3GATMA1 Overview

The BSC057N08NS3GATMA1 is a high-efficiency N-channel MOSFET optimized for industrial, automotive, and power management applications. With a low on-resistance and robust 80V voltage rating, this device ensures reliable switching performance and reduced conduction losses. Its compact SuperSO8 package supports space-saving designs while facilitating excellent thermal management. Designed for engineers seeking enhanced efficiency and durability, the BSC057N08NS3GATMA1 is suitable for a wide range of demanding environments. For detailed sourcing and manufacturer options, visit IC Manufacturer.

BSC057N08NS3GATMA1 Technical Specifications

ParameterSpecification
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)80 V
Continuous Drain Current (ID)100 A
On-State Resistance (RDS(on))5.7 m?? at VGS = 10 V
Gate Charge (Qg)62 nC
Power Dissipation150 W
PackageSuperSO8 (Standard)
Operating Temperature Range-55??C to +175??C
Mounting TypeSurface Mount

BSC057N08NS3GATMA1 Key Features

  • Low on-resistance (RDS(on)), minimizing conduction losses and boosting system efficiency.
  • High drain current handling (up to 100 A), supporting power-demanding loads and robust applications.
  • 80V voltage rating ensures safe operation in high-voltage circuits, broadening application flexibility.
  • Compact SuperSO8 package provides space-saving benefits for dense PCB layouts while enabling efficient heat dissipation.
  • Wide operating temperature range from -55??C to +175??C allows reliable use in harsh industrial and automotive environments.
  • Surface-mount design streamlines automated assembly and reduces manufacturing costs.

BSC057N08NS3GATMA1 Advantages vs Typical Alternatives

Compared to standard N-channel MOSFETs, this device delivers lower RDS(on) for reduced power losses and supports high current capability, making it a superior choice for energy-conscious and high-reliability systems. Its advanced package and extended temperature range offer enhanced durability and layout flexibility, giving engineers greater reliability and performance in demanding applications.

Typical Applications

  • High-efficiency DC-DC converters: Its low on-resistance and high current rating make it ideal for synchronous rectification and switching stages in industrial power supplies, where minimizing losses is critical for thermal management and system efficiency.
  • Automotive motor control circuits, where robust voltage and current handling are essential for reliable operation in harsh conditions.
  • Battery management systems, particularly for electric vehicles or backup power, leveraging the device??s low conduction losses for improved energy efficiency.
  • Load switching and protection in industrial automation, benefiting from the device??s compact package and high power dissipation capability.

BSC057N08NS3GATMA1 Brand Info

This MOSFET is part of a trusted portfolio of advanced power semiconductor devices, designed to meet the stringent requirements of modern industrial and automotive electronics. With a focus on efficiency, reliability, and integration, the BSC057N08NS3GATMA1 demonstrates the brand??s commitment to high-performance, application-driven solutions. Its combination of robust electrical characteristics and innovative packaging technologies makes it a preferred choice for engineers and procurement specialists seeking long-term value and consistent quality.

FAQ

What is the maximum voltage rating for the BSC057N08NS3GATMA1?

The device has a drain-source voltage rating of 80V, allowing it to be safely used in medium- to high-voltage switching applications without risk of breakdown under normal operating conditions.

What package type does this MOSFET use?

It is housed in a SuperSO8 surface-mount package, which combines a compact footprint with excellent thermal management properties, making it suitable for dense PCB layouts and automated assembly processes.

How does the low on-resistance benefit my power design?

The low RDS(on) value of 5.7 m?? reduces conduction losses during operation. This directly improves energy efficiency, minimizes heat generation, and helps achieve higher power density in switching power supplies or motor drives.

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产品中间询盘

Can this MOSFET operate in high-temperature environments?

Yes, it is rated for continuous operation across a wide temperature range from -55??C to +175??C, ensuring reliable performance even in challenging automotive or industrial environments where thermal stress is a concern.

Is the BSC057N08NS3GATMA1 suitable for high current applications?

Absolutely. With a continuous drain current capability of up to 100 A and a power dissipation rating of 150 W, it is well-suited for demanding loads such as motor drives, power converters, and protection circuits requiring robust current handling.

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