IAUC120N04S6L005ATMA1 N-Channel MOSFET 40V 120A TO-263 Infineon Transistor

  • Enables efficient switching and control in power management circuits for improved device performance.
  • Low RDS(on) reduces conduction losses, supporting higher efficiency and less heat generation during operation.
  • The device??s compact package saves valuable board space in densely populated electronic designs.
  • Commonly used in motor drivers, it helps ensure responsive and stable operation in automotive systems.
  • Manufactured for consistent quality, promoting reliable operation over extended service periods.
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产品上方询盘

IAUC120N04S6L005ATMA1 Overview

The IAUC120N04S6L005ATMA1 is a high-performance MOSFET designed for demanding industrial and power management applications. With its low on-resistance and advanced trench technology, this N-channel device delivers exceptional switching efficiency and thermal performance. Its compact SuperSO8 package supports high current handling while minimizing board space, making it an excellent choice for applications where power density and reliability are critical. Engineered for robust operation, this product aligns with stringent quality and performance standards, ensuring stable operation in a wide range of environments. Learn more at IC Manufacturer.

IAUC120N04S6L005ATMA1 Technical Specifications

ParameterValue
Part NumberIAUC120N04S6L005ATMA1
Transistor TypeN-Channel MOSFET
Package / CaseSuperSO8
Drain-Source Voltage (VDS)40 V
Continuous Drain Current (ID)120 A
RDS(on) (Max)0.5 m??
TechnologyTrench MOSFET
Operating Temperature Range-55??C to +175??C
Mounting TypeSurface Mount

IAUC120N04S6L005ATMA1 Key Features

  • Ultra-low RDS(on) of 0.5 m?? minimizes conduction losses, significantly improving overall system efficiency in high-current circuits.
  • High continuous drain current capability (120 A) enables reliable operation in power conversion and motor control applications where robust current handling is essential.
  • Advanced trench technology ensures fast switching performance, reducing switching losses and supporting higher frequency designs.
  • SuperSO8 surface-mount package offers a compact footprint with excellent thermal management, facilitating integration into space-constrained layouts.

IAUC120N04S6L005ATMA1 Advantages vs Typical Alternatives

Compared to conventional MOSFETs, this device stands out with its extremely low on-state resistance, high current carrying capacity, and efficient thermal characteristics. These attributes translate to lower power dissipation, reduced heat generation, and enhanced reliability in industrial and automotive environments. Its trench MOSFET structure further supports fast, precise switching for modern power electronics applications.

Typical Applications

  • High-efficiency DC/DC converters and synchronous rectification designs benefit from the low RDS(on) and high current rating, optimizing power delivery and reducing energy loss.
  • Motor drive circuits in industrial automation or robotics utilize the robust current handling and thermal stability for consistent, reliable performance.
  • Battery management systems in electric vehicles or energy storage solutions leverage the efficient switching and low conduction losses for maximized battery life and safety.
  • Power distribution units and load switches in telecom and data center infrastructure rely on the device??s reliability under high load conditions and compact form factor.

IAUC120N04S6L005ATMA1 Brand Info

This product is engineered by a leading manufacturer recognized for advanced semiconductor technologies. The IAUC120N04S6L005ATMA1 is tailored for high-power applications, featuring innovative trench MOSFET design and a compact SuperSO8 package. Its robust electrical and thermal performance reflects the brand??s commitment to quality and reliability, making it a trusted choice in industrial, automotive, and energy sectors.

FAQ

What are the main benefits of using this MOSFET in high-current applications?

The device??s low RDS(on) and high drain current capability significantly reduce conduction losses and heat generation, which is essential for maintaining efficiency and reliability in high-current circuits often found in power electronics and automation systems.

How does the package type contribute to the device??s performance?

The SuperSO8 surface-mount package offers an optimal balance between compact size and thermal management. This enables high current handling without excessive heat buildup, supporting dense PCB designs and efficient heat dissipation in demanding environments.

In which temperature ranges is the device qualified to operate?

This MOSFET operates reliably across a wide temperature range from -55??C to +175??C. This makes it suitable for both industrial and automotive sectors where exposure to extreme temperatures is common.

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产品中间询盘

What makes the trench MOSFET technology advantageous for switching applications?

Trench technology provides lower on-state resistance and faster switching performance compared to traditional planar MOSFETs. This reduces switching and conduction losses, supporting higher efficiency in DC/DC converters, motor drives, and similar applications.

Is this device suitable for surface-mount assembly processes?

Yes, the SuperSO8 package is specifically designed for surface-mount technology (SMT), ensuring compatibility with automated assembly lines and enabling quick, reliable installation onto modern PCBs in high-volume manufacturing.

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