BSZ150N10LS3GATMA1 N-Channel MOSFET, 100V 150A, OptiMOS-3, PG-TSDSON-8 Package

  • Functions as an N-channel MOSFET, enabling efficient switching and control in power electronics circuits.
  • Features a low on-resistance, which reduces power loss and heat during operation for improved efficiency.
  • Compact package design helps save board space, allowing for streamlined layouts in dense electronic assemblies.
  • Suitable for use in motor drivers or DC-DC converters, providing reliable load management in industrial systems.
  • Designed for consistent performance, supporting stable operation in demanding electrical environments.
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产品上方询盘

BSZ150N10LS3GATMA1 Overview

The BSZ150N10LS3GATMA1 is a power MOSFET engineered for efficient switching and robust performance in demanding industrial and automotive systems. With its optimized N-channel structure, it delivers low on-state resistance and fast switching abilities, supporting high-frequency operation and enhanced energy efficiency. This device meets the requirements for compact, reliable, and thermally stable designs, making it suitable for a wide range of modern electronic applications. For further details and sourcing, visit IC Manufacturer.

BSZ150N10LS3GATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 150 A
RDS(on) (On-State Resistance) 3.1 m?? (max)
VGS (Gate-Source Voltage) ?I20 V
Package / Case SuperSO8
Technology MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
Operating Temperature Range -55??C to +150??C

BSZ150N10LS3GATMA1 Key Features

  • Ultra-low RDS(on): Delivers only 3.1 m?? at maximum, reducing conduction losses and boosting system efficiency.
  • High Current Handling: Supports up to 150 A continuous drain current, ideal for high-power industrial and automotive loads.
  • Robust Voltage Tolerance: Operates reliably at up to 100 V drain-source voltage, suitable for demanding switching applications.
  • Compact SuperSO8 Package: Enables high-density PCB layouts, saving board space without sacrificing performance.
  • Wide Temperature Range: Ensures reliability across extreme environments from -55??C to +150??C.
  • Enhanced Switching Performance: Fast switching speeds support efficient operation in high-frequency circuits.

BSZ150N10LS3GATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this component offers a combination of low on-state resistance and high current capability, resulting in lower power dissipation and improved thermal efficiency. Its robust voltage and temperature ratings further enhance reliability in harsh industrial and automotive environments, providing a strong balance of performance and efficiency for demanding power switching applications.

Typical Applications

  • Power Management in Automotive ECUs: The device??s low RDS(on) and high current handling make it ideal for battery management, motor drive modules, and power distribution units in advanced automotive electronics.
  • DC-DC Converters: Perfect for efficient power conversion in industrial and telecom power supplies, where switching losses and thermal performance are critical.
  • Motor Control Circuits: Suitable for controlling brushed and brushless DC motors due to its fast switching and robust current capabilities.
  • Switching Power Supplies: Delivers reliable high-frequency switching in server, industrial, and consumer power supply designs.

BSZ150N10LS3GATMA1 Brand Info

The BSZ150N10LS3GATMA1 is manufactured by a leading semiconductor provider renowned for high-reliability power devices. This specific model exemplifies a focus on efficiency, integration, and rugged design, tailored for next-generation automotive and industrial systems. Its advanced MOSFET technology, combined with the compact SuperSO8 package, aligns with industry demands for space-saving, energy-efficient, and thermally robust solutions.

FAQ

What benefits does the 3.1 m?? on-state resistance provide in high-power applications?

The ultra-low RDS(on) minimizes conduction losses, which helps reduce heat generation and improves the efficiency of power delivery circuits. This is especially important in environments where energy savings and thermal performance are critical.

Can the device handle high ambient temperatures found in industrial settings?

Yes, with an operating temperature range from -55??C to +150??C, this MOSFET is designed to function reliably under extreme thermal conditions often present in industrial and automotive environments.

How does the SuperSO8 package benefit space-constrained designs?

The SuperSO8 package provides a compact footprint without compromising electrical or thermal performance. This allows engineers to achieve higher component density on PCBs, supporting miniaturization of end products.

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产品中间询盘

Is this device suitable for fast switching applications?

Yes, the device is optimized for fast switching, making it suitable for use in high-frequency circuits such as DC-DC converters and switching power supplies where rapid transitions are necessary for efficiency.

What makes this MOSFET a reliable choice for automotive applications?

Its combination of high current capability, robust voltage tolerance, and wide temperature range ensures dependable operation in automotive systems, where reliability and efficiency are paramount.

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