BSC042NE7NS3GATMA1 N-Channel Power MOSFET, OptiMOS3, SuperSO8 Package

  • Designed for efficient switching and low conduction losses, supporting high-performance power management in electronic circuits.
  • Features a compact footprint, allowing board-space savings in dense electronic assemblies and portable devices.
  • The BSC042NE7NS3GATMA1 model is suitable for use in DC-DC converters, ensuring stable voltage regulation under varying load conditions.
  • Reliable operation supports long-term performance even in demanding environments, reducing system maintenance needs.
  • Key electrical characteristics optimize circuit efficiency, contributing to lower power consumption and reduced heat buildup.
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产品上方询盘

BSC042NE7NS3GATMA1 Overview

The BSC042NE7NS3GATMA1 is a power MOSFET designed to deliver high performance in demanding electronic applications. With its optimized N-channel structure and low on-resistance, this component is ideal for efficient power conversion and switching tasks. Its advanced package enhances thermal management and reliability, making it suitable for industrial, automotive, and consumer designs. The device supports robust operation in compact layouts, helping engineers achieve both space savings and energy efficiency. For more information, visit IC Manufacturer.

BSC042NE7NS3GATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)60A
RDS(on) (Max)4.2 m??
Gate Charge (Qg)47 nC
Package / CaseSuperSO8
Mounting TypeSurface Mount
Operating Temperature Range-55??C to +150??C

BSC042NE7NS3GATMA1 Key Features

  • Very low RDS(on) enables reduced conduction losses, supporting high efficiency in power stages.
  • High drain current capability ensures robust performance in demanding load conditions, which is essential for industrial and automotive switching applications.
  • Surface-mount SuperSO8 package promotes excellent thermal dissipation and allows for compact PCB layouts, increasing design flexibility and reliability.
  • Wide operating temperature range enhances suitability for harsh environments and ensures long-term device stability.

BSC042NE7NS3GATMA1 Advantages vs Typical Alternatives

This device stands out due to its combination of low on-state resistance and high current handling, leading to superior efficiency and reduced heat generation compared to standard MOSFETs. The advanced packaging further improves thermal performance and integration within dense designs, making it a reliable choice for high-power circuits.

Typical Applications

  • Switching power supplies: The low RDS(on) and high current rating make it ideal for use in high-efficiency DC-DC converters and power management systems.
  • Motor drives: Its robust current capability supports reliable operation in motor control circuits for industrial automation and automotive applications.
  • Battery management: Suitable for protection and switching in battery-powered systems due to its efficiency and thermal stability.
  • Load switching and protection: Frequently used for switching high-current loads in electronic systems where space and thermal performance are critical.

BSC042NE7NS3GATMA1 Brand Info

This device is engineered by a leading semiconductor manufacturer, known for innovation in power MOSFET technology. The BSC042NE7NS3GATMA1 exemplifies the brand??s commitment to delivering high-efficiency, reliability, and advanced packaging, supporting modern power management and switching needs in industrial and automotive markets.

FAQ

What is the main advantage of using this MOSFET in power supply designs?

The primary advantage is its low RDS(on) value, which minimizes conduction losses, resulting in higher power conversion efficiency. This is particularly beneficial in switching power supply designs where thermal performance and energy efficiency are critical.

Can this device be used in automotive environments?

Yes, the wide operating temperature range and robust current handling make it suitable for automotive applications. Its reliability and thermal stability support demanding operating conditions typically found in such environments.

What packaging does this MOSFET utilize, and why is it beneficial?

The device features a SuperSO8 surface-mount package, which offers excellent thermal dissipation and supports compact circuit board designs. This helps engineers create high-density layouts without sacrificing performance or reliability.

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产品中间询盘

How does the gate charge affect switching performance?

The moderate gate charge (Qg) value allows for efficient switching with manageable drive requirements, which is important for maintaining fast switching speeds and minimizing gate driver losses in high-frequency circuits.

Is this device suitable for battery-powered systems?

Yes, its efficiency, low on-state resistance, and thermal reliability make it well-suited for battery management and protection circuits, where minimizing energy loss and heat buildup is essential for overall system performance.

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