IPP200N15N3GXKSA1 Overview
The IPP200N15N3GXKSA1 is a robust N-channel MOSFET engineered for high-performance switching and power conversion applications. Featuring advanced trench technology and low RDS(on), this component delivers high efficiency and reliability in demanding industrial environments. Its TO-220 package ensures straightforward integration for both new designs and legacy systems. With a high voltage and current handling capability, this MOSFET is ideal for engineers seeking reliable solutions in power management and motor drive circuits. For more details, visit IC Manufacturer.
IPP200N15N3GXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 200 A |
| RDS(on) (Max) | 3.1 m?? |
| Gate Charge (Qg) | 260 nC |
| Package Type | TO-220 |
| Operating Temperature Range | -55??C to +175??C |
| Technology | Trench MOSFET |
| Mounting Style | Through Hole |
IPP200N15N3GXKSA1 Key Features
- Extremely low RDS(on) of 3.1 m?? maximizes efficiency and minimizes conduction losses in high-current applications.
- High continuous drain current rating of 200 A offers robust performance for power-intensive circuits and ensures reliable operation under heavy loads.
- 150 V drain-source voltage supports wide input voltage ranges, giving design flexibility in industrial and automotive systems.
- Advanced trench technology delivers superior switching performance, making it suitable for fast-switching circuits and reducing switching losses.
- TO-220 package with through-hole mounting simplifies integration into existing layouts and improves thermal management.
- Wide operating temperature range provides durability in harsh environments, supporting long-term reliability in industrial settings.
IPP200N15N3GXKSA1 Advantages vs Typical Alternatives
Thanks to its low RDS(on) value and high current handling capability, this N-channel MOSFET provides superior efficiency and reduced heat generation compared to standard alternatives. The advanced trench structure enhances switching speed, while the TO-220 package ensures effective thermal dissipation and compatibility with established designs. These combined strengths make it a preferred choice for engineers seeking reliable, high-performance power devices.
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Typical Applications
- Switching power supplies: The device??s low RDS(on) and high current capability optimize efficiency and thermal performance in industrial and server-grade SMPS units, where reliability and compactness are crucial.
- Motor drives: Its robust voltage and current ratings make it suitable for controlling high-power motors in automation, robotics, and electric vehicles.
- DC-DC converters: The fast switching and low conduction losses improve power density and overall performance in step-down and step-up converter topologies.
- Uninterruptible Power Supplies (UPS): Ensures reliable power switching under heavy and fluctuating loads, critical for backup and emergency power systems.
IPP200N15N3GXKSA1 Brand Info
The IPP200N15N3GXKSA1 is part of a reputable family of power MOSFETs recognized for their robust performance and reliability in demanding industrial applications. The use of advanced trench technology ensures low on-state resistance and high efficiency, while the TO-220 package provides optimal heat dissipation and ease of mounting. This device is well-suited for engineers seeking proven solutions in power conversion and motor control, backed by stringent quality standards and a strong commitment to innovation.
FAQ
What makes the IPP200N15N3GXKSA1 suitable for high-power applications?
This device combines a very low on-state resistance with a high continuous drain current rating, enabling efficient handling of high power levels. Its robust construction and advanced trench technology further ensure reliable performance under demanding load conditions.
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Can this MOSFET be used in fast-switching circuits?
Yes, the trench MOSFET design is optimized for fast switching, which helps reduce switching losses and improve efficiency in applications such as DC-DC converters and power inverters. The low gate charge also supports rapid transitions.
How does the TO-220 package benefit thermal management?
The TO-220 package offers excellent thermal conductivity and allows for straightforward attachment of heatsinks. This helps maintain safe operating temperatures even under high current loads, extending the device??s operational lifespan.
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Is the IPP200N15N3GXKSA1 compatible with legacy systems?
Its standard TO-220 form factor and through-hole mounting style ensure compatibility with a wide range of legacy and new systems, simplifying upgrades and replacements in existing designs.
What environments can this MOSFET operate in?
The wide operating temperature range from -55??C to +175??C enables reliable use in harsh industrial, automotive, or outdoor environments, ensuring stable operation even under significant thermal stress.
