IPN95R1K2P7ATMA1 N-Channel MOSFET Transistor, TO-263 Package

  • Enables efficient power switching, making it suitable for precise voltage regulation in electronic circuits.
  • Features an N-channel MOSFET configuration, which supports fast switching and low on-resistance for reduced power loss.
  • The compact package type helps save board space, allowing for higher component density in designs with limited area.
  • Ideal for use in power management systems, such as DC-DC converters, to enhance energy efficiency and system control.
  • Designed for consistent performance, supporting stable operation over a range of environmental and electrical conditions.
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IPN95R1K2P7ATMA1 Overview

The IPN95R1K2P7ATMA1 is an advanced power MOSFET designed to deliver robust performance in demanding industrial and power management applications. Engineered for high efficiency and reliable switching, this device is optimized for low conduction losses and effective thermal management. Its compact SuperSO8 package ensures straightforward integration into dense PCB layouts, supporting modern designs that require both performance and space efficiency. For engineers seeking consistent reliability and superior switching characteristics, this component stands out as a compelling choice. Learn more at IC Manufacturer.

IPN95R1K2P7ATMA1 Technical Specifications

Parameter Value
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 950 V
Continuous Drain Current (ID) 1.25 A
RDS(on) (Max) 1.21 ??
Gate Charge (Qg typical) 10.8 nC
Package SuperSO8
Mounting Type Surface Mount (SMD/SMT)
Polarity N-Channel
Technology CoolMOS? P7

IPN95R1K2P7ATMA1 Key Features

  • High voltage tolerance of up to 950 V enables safe operation in industrial and high-power environments, reducing the risk of breakdown under voltage surges.
  • Low RDS(on) value minimizes conduction losses, which directly improves system efficiency and lowers operational heat.
  • Compact SuperSO8 package facilitates high-density board designs, making it suitable for applications with strict space constraints.
  • Optimized gate charge ensures fast switching performance, critical for high-frequency or rapid on/off cycling in advanced power systems.

IPN95R1K2P7ATMA1 Advantages vs Typical Alternatives

This MOSFET offers a compelling mix of high voltage capability, low on-resistance, and efficient switching, setting it apart from standard alternatives. Its advanced CoolMOS? P7 technology delivers superior energy efficiency, while the SuperSO8 package simplifies integration and enhances power density. With optimized thermal and electrical characteristics, users benefit from increased reliability and reduced system losses in comparison to conventional MOSFETs.

Typical Applications

  • Switch mode power supplies (SMPS): The device??s high voltage rating and efficient switching characteristics make it ideal for use in modern SMPS architectures, improving power conversion efficiency and thermal performance.
  • Industrial motor drives: Its robust voltage handling and low RDS(on) help ensure reliable operation in variable speed drive circuits and other demanding motor control environments.
  • LED lighting drivers: The combination of fast switching and low losses supports the development of energy-efficient, compact LED power supplies.
  • DC-DC converters: The device is well-suited for high-efficiency DC-DC conversion in industrial and telecom power infrastructure, supporting compact, reliable design.

IPN95R1K2P7ATMA1 Brand Info

The IPN95R1K2P7ATMA1 is part of the innovative CoolMOS? P7 series, reflecting a commitment to high-performance power management solutions. This product line is recognized for advancing efficiency and reliability in industrial and commercial applications. With a focus on reducing conduction and switching losses, the series is tailored for engineers who demand robust, compact, and energy-saving components in power conversion designs. The SuperSO8 package further illustrates the brand??s dedication to modern, high-density electronic assemblies.

FAQ

What type of applications benefit most from this MOSFET??s high voltage rating?

Applications such as industrial power supplies, high-voltage converters, and robust motor drives benefit significantly from the 950 V rating, ensuring reliable operation under challenging voltage conditions and providing extra design margin against transient spikes.

How does the low RDS(on) value affect overall system efficiency?

A lower RDS(on) reduces conduction losses during operation, which translates to less heat generated and improved energy efficiency. This is particularly valuable for systems aiming to meet stringent efficiency standards or minimize thermal management requirements.

What are the integration advantages of the SuperSO8 package?

The SuperSO8 package offers a compact footprint, enabling higher component density on PCBs. This is ideal for space-constrained designs while maintaining excellent thermal and electrical performance for power applications.

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Is the device suitable for high-frequency switching applications?

Yes, the optimized gate charge and fast switching characteristics make it well-suited for high-frequency applications, such as modern switch mode power supplies and advanced DC-DC converters, where efficiency and rapid response are essential.

What benefits does CoolMOS? P7 technology provide in real-world designs?

CoolMOS? P7 technology enhances efficiency by reducing both conduction and switching losses. For engineers, this means greater system reliability, easier compliance with energy regulations, and the ability to design more compact, thermally manageable solutions without sacrificing performance.

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