BSC097N06NSATMA1 N-Channel MOSFET, Power Transistor, SuperSO8 Package

  • Functions as an N-channel MOSFET, enabling efficient switching and power management in electronic circuits.
  • Low on-resistance helps reduce conduction losses, which is important for energy efficiency in power supplies.
  • Compact package type allows for high-density board designs and saves valuable PCB space.
  • Commonly used in DC-DC converters to improve load regulation and minimize power loss during conversion.
  • Manufactured to meet standard reliability requirements, supporting consistent performance in various operating conditions.
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BSC097N06NSATMA1 Overview

The BSC097N06NSATMA1 is a highly efficient N-channel MOSFET optimized for modern power management and switching applications. This device is engineered to deliver low on-resistance and fast switching performance, making it suitable for demanding industrial, automotive, and consumer electronic systems. Designed for surface-mount assembly in a space-saving SuperSO8 package, it offers reliable operation and robust electrical performance. With its blend of efficiency, compact form factor, and versatility, this MOSFET is a preferred solution for power conversion, load switching, and DC-DC converter circuits. (IC Manufacturer)

BSC097N06NSATMA1 Technical Specifications

ParameterValue
Device TypeN-Channel MOSFET
Maximum Drain-Source Voltage (VDS)60 V
Continuous Drain Current (ID)100 A
RDS(on) (max) @ VGS=10V9.7 m??
Gate-Source Voltage (VGS)?I20 V
Power Dissipation (PD)150 W
Package TypeSuperSO8
MountingSurface Mount (SMD)
Operating Temperature Range-55??C to +175??C

BSC097N06NSATMA1 Key Features

  • Low RDS(on) ensures minimal conduction losses, directly improving system efficiency in power conversion circuits.
  • High current handling capability (up to 100 A) allows use in demanding loads, supporting robust operation in industrial and automotive environments.
  • Compact SuperSO8 package enables high-density board layouts, maximizing space savings in multi-channel or compact designs.
  • Wide gate-source voltage range (?I20 V) provides flexibility for diverse gate driver topologies and enhanced design compatibility.
  • Surface-mount design streamlines automated assembly and improves thermal management through optimized package layout.
  • Rated for high operating temperatures up to 175??C, supporting reliability in harsh environments.

BSC097N06NSATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET stands out with its combination of low on-state resistance and high current capacity, reducing power loss and thermal stress compared to standard alternatives. The SuperSO8 package not only saves board space but also enhances thermal performance. Its broad voltage and current ratings, along with robust temperature tolerance, provide greater design flexibility and operational reliability for power management applications.

Typical Applications

  • DC-DC Converters: Ideal for synchronous rectification in high-efficiency DC-DC converters, enabling precise power delivery and reduced energy losses in industrial and telecom power supplies.
  • Motor Drives: Suitable for use in motor control circuits, supporting high current switching and reliable operation in automation or automotive systems.
  • Load Switches: Can be deployed as a low-loss load switch in battery-powered devices, optimizing energy usage and extending equipment lifetime.
  • Power Management Modules: Well-suited for power distribution units and server motherboards requiring efficient switching and thermal robustness.

BSC097N06NSATMA1 Brand Info

This product is part of a trusted portfolio of advanced power MOSFETs, developed for applications where efficiency, high current capability, and compact design are critical. The device leverages proven semiconductor process technology and is available in the industry-standard SuperSO8 package to ensure seamless integration into existing designs. Its robust electrical ratings and surface-mount form factor make it a favored choice among engineers building reliable, high-performance switching and power management solutions.

FAQ

What is the maximum drain-source voltage this MOSFET can withstand?

The device is rated for a maximum drain-source voltage of 60 V, making it suitable for a wide range of low- to medium-voltage power switching and conversion applications.

Can the device handle high continuous drain currents?

Yes, it supports continuous drain currents up to 100 A, allowing it to manage significant loads in industrial, automotive, and power supply circuits without performance degradation under typical conditions.

What makes the SuperSO8 package advantageous?

The SuperSO8 package is highly compact, supporting high-density board designs, and offers improved thermal characteristics. This enables efficient heat dissipation and reliable operation even in space-constrained or high-temperature environments.

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Is this MOSFET suitable for surface-mount technology (SMT) assembly?

Absolutely. The device is designed for surface-mount applications, streamlining automated assembly processes, and supporting efficient mass production while maintaining high electrical performance.

What temperature range can the device operate within?

It is rated for an operating temperature range from -55??C to +175??C. This wide range ensures reliable functionality in both standard and harsh environmental conditions, making it suitable for automotive and industrial use.

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