IPD50N06S4L12ATMA2 N-Channel MOSFET, 60V 50A, TO-252 Package, Power Transistor

  • Enables efficient switching and control in power management circuits, reducing energy loss in electronic designs.
  • Features an optimized MOSFET structure, which allows for lower on-resistance and improved thermal performance.
  • Compact package design minimizes board space requirements, ideal for high-density layouts in modern systems.
  • Suitable for automotive or industrial applications where precise power delivery and low heat generation are essential.
  • Tested to meet rigorous electrical standards, ensuring stable operation and consistent performance throughout device lifespan.
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IPD50N06S4L12ATMA2 Overview

The IPD50N06S4L12ATMA2 is a robust N-channel MOSFET engineered for high-performance switching and power management in demanding industrial environments. Its efficient design, low RDS(on) values, and compact SOT-223 package make it an excellent choice for modern electronic systems requiring optimized thermal management and reliable current handling. Ideal for automotive, industrial, and power conversion applications, this device supports enhanced efficiency and system integration. Discover more about this advanced MOSFET at IC Manufacturer.

IPD50N06S4L12ATMA2 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 50 A
RDS(on) (Max) at VGS = 10V 12 m??
Gate Threshold Voltage (VGS(th)) 1.2 V
Maximum Gate-Source Voltage (VGS) ?I20 V
Package SOT-223 (TO-261AA)
Operating Temperature Range -55??C to 175??C
Mounting Type Surface Mount

IPD50N06S4L12ATMA2 Key Features

  • Low RDS(on) of 12 m?? reduces conduction losses, enabling higher energy efficiency in switching circuits.
  • High current capability of 50 A allows for reliable operation in power-intensive applications such as automotive or industrial power supplies.
  • Wide operating temperature range from -55??C to 175??C ensures dependable performance in harsh and fluctuating environments.
  • Compact SOT-223 package supports high-density board designs and efficient heat dissipation for thermal stability.

IPD50N06S4L12ATMA2 Advantages vs Typical Alternatives

The device stands out with its combination of high current handling, low RDS(on) values, and wide temperature range, delivering superior power efficiency and reliability compared to standard N-channel MOSFETs. Its SOT-223 package provides excellent thermal performance for compact designs, making it ideal for applications where board space and heat management are critical.

Typical Applications

  • Automotive power management systems: Suited for high-current switching and load control, ensuring efficient operation and reliability in automotive ECUs and power distribution modules.
  • Industrial motor driver circuits: Provides robust performance for industrial automation and motion control, handling fast switching and substantial load currents with minimal losses.
  • DC-DC converters and switching regulators: Enhances power conversion efficiency and thermal management in compact power supply solutions for industrial equipment.
  • General-purpose power switching: Suitable for relay replacement or load switching in a wide range of electronics, benefiting from low on-resistance and high current capability.

IPD50N06S4L12ATMA2 Brand Info

The IPD50N06S4L12ATMA2 is a specialized MOSFET device from a leading semiconductor manufacturer, developed to meet the stringent requirements of industrial and automotive sectors. Its design prioritizes efficiency and reliability, making it a preferred solution for engineers seeking dependable MOSFETs for power management and high-speed switching applications. This product is recognized for its robust construction, long operating life, and adaptability across various demanding environments.

FAQ

What is the maximum continuous drain current supported by this MOSFET?

The device is rated for a maximum continuous drain current of 50 A, enabling it to manage substantial power loads in automotive and industrial applications without compromising reliability or thermal performance.

What package type does this MOSFET use, and how does it benefit designers?

It is offered in the SOT-223 (TO-261AA) surface-mount package, which is known for its compact footprint and efficient heat dissipation properties. This package simplifies PCB design and supports high-density layouts, especially in space-constrained systems.

How does the low RDS(on) value impact circuit efficiency?

The low on-resistance of 12 m?? significantly reduces conduction losses, improving overall energy efficiency and minimizing heat generation. This is especially advantageous in power supplies and motor driver circuits where every watt matters.

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产品中间询盘

Is this MOSFET suitable for operation in extreme environmental conditions?

Yes, with an operating temperature range from -55??C to 175??C, this device is well-suited for use in harsh or fluctuating environments, ensuring stable performance across a wide range of temperatures.

What are typical use cases for this MOSFET in industrial applications?

It is ideal for use in automotive power management, industrial motor drivers, DC-DC converters, and general-purpose switching. Its robust specifications enable reliable performance in high-current, fast-switching, and thermally demanding scenarios.

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