IPD090N03LGATMA1 Overview
The IPD090N03LGATMA1 is a high-performance N-channel MOSFET designed for demanding industrial, automotive, and power supply applications. Featuring low on-resistance and fast switching capabilities, this device excels in environments where efficiency and thermal management are critical. Its advanced silicon technology and robust packaging provide a reliable solution for engineers seeking compact, high-current handling and enhanced switching performance. For additional details and sourcing, visit IC Manufacturer.
IPD090N03LGATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 90 A |
| RDS(on) (Max.) | 9 m?? |
| Gate Threshold Voltage (VGS(th)) | 1 ÿ 2.5 V |
| Package Type | PG-TDSON-8 |
| Operating Temperature Range | -55??C to +175??C |
| Polarity | N-Channel |
| Mounting Style | Surface Mount |
IPD090N03LGATMA1 Key Features
- Low RDS(on): Achieves minimal conduction losses, enabling higher efficiency and reduced heat generation in power circuits.
- High Current Capability: Supports up to 90 A continuous drain current, making it suitable for high-load switching and power management applications.
- Enhanced Thermal Performance: The PG-TDSON-8 package ensures effective heat dissipation, allowing reliable operation at elevated temperatures.
- Logic-Level Gate Drive: Compatible with low gate threshold voltages (1ÿ2.5 V), simplifying interfacing with microcontrollers and logic-level circuits.
- Surface Mount Design: Optimized for automated assembly and compact PCB layouts in high-density systems.
IPD090N03LGATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its combination of low on-resistance and high current handling, which directly translates to lower power losses and improved energy efficiency compared to standard devices. Its surface mount PG-TDSON-8 package and logic-level gate drive further simplify integration and reduce system size, making it a superior choice for applications demanding reliability and compactness.
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Typical Applications
- DC-DC Converters: Utilized in high-efficiency switching regulators for power management in industrial and automotive systems, taking advantage of low RDS(on) for minimal losses.
- Motor Drives: Employed in controlling and driving brushed or brushless DC motors, where high current support and fast switching are essential.
- Load Switches: Used as a robust electronic switch for battery management, power distribution, and protection circuits in demanding environments.
- Synchronous Rectification: Applied in high-frequency switching power supplies to improve efficiency and reduce thermal stress in rectification stages.
IPD090N03LGATMA1 Brand Info
The IPD090N03LGATMA1 is a product of a leading global semiconductor manufacturer known for delivering high-quality power management devices. This device demonstrates a focus on innovation in MOSFET technology, offering a blend of high current capability, low on-resistance, and compact packaging. It is engineered to meet rigorous industrial and automotive standards, making it an optimal choice for engineers prioritizing performance, reliability, and integration flexibility.
FAQ
What applications are best suited for the IPD090N03LGATMA1?
This MOSFET is ideal for use in high-efficiency DC-DC converters, motor drives, electronic load switches, and synchronous rectification circuits, where its low RDS(on) and high current capacity provide significant performance benefits.
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What packaging does the device utilize, and how does it help integration?
The device is offered in a PG-TDSON-8 surface mount package, which is designed for efficient thermal management and compact PCB layouts, facilitating high-density system integration and automated assembly processes.
How does the low gate threshold voltage benefit system designers?
A gate threshold voltage range of 1ÿ2.5 V allows for direct drive by logic-level outputs, reducing the need for additional gate driver circuitry and simplifying control interface design in embedded or digital systems.
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What are the thermal characteristics of the IPD090N03LGATMA1?
With an operating temperature range from -55??C to +175??C and a package designed for effective heat dissipation, this MOSFET can reliably operate in harsh and high-temperature environments, ensuring system stability and longevity.
Is the device suitable for automotive environments?
Yes, its robust construction, high current rating, and wide operating temperature range make it well-suited for automotive applications such as motor control, power distribution, and battery management systems.
